Green laser diodes with constant temperature growth of InGaN/GaN multiple quantum well active region

2019 ◽  
Vol 12 (6) ◽  
pp. 064007 ◽  
Author(s):  
Aiqin Tian ◽  
Jianping Liu ◽  
Renlin Zhou ◽  
Liqun Zhang ◽  
Siyi Huang ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Constant Temperature ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Green Laser ◽  
Multiple Quantum ◽  
Temperature Growth

Optimization of active region for 1.3-µm GalnAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes

2006 ◽  
Vol 35 (2) ◽  
pp. 243-249 ◽  
Author(s):  
Po-Hsun Lei ◽  
Chyi-Dar Yang ◽  
Ming-Yuan Wu ◽  
Chih-Wei Hu ◽  
Meng-Chyi Wu ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Compressive Strain ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Multiple Quantum ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

1.5μm λ/4 shifted multiple quantum well distributed feedback laser diodes

1988 ◽  
Vol 24 (23) ◽  
pp. 1408 ◽  
Author(s):  
T. Sasaki ◽  
S. Takano ◽  
N. Henmi ◽  
H. Yamada ◽  
M. Kitamura ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Distributed Feedback Laser

1.5 μm multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE

1988 ◽  
Vol 24 (16) ◽  
pp. 1045 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
N. Henmi ◽  
T. Sasaki ◽  
H. Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Distributed Feedback Laser

GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes

1990 ◽  
Vol 2 (7) ◽  
pp. 456-458 ◽  
Author(s):  
Y.H. Wang ◽  
K. Tai ◽  
J.D. Wynn ◽  
M. Hong ◽  
R.J. Fischer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Cavity Surface ◽  
Multiple Quantum ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

scholarly journals Thermomechanical degradation of single and multiple quantum well AlGaAs/GaAs laser diodes

2017 ◽  
Vol 76-77 ◽  
pp. 588-591 ◽  
Author(s):  
J. Souto ◽  
J.L. Pura ◽  
A. Torres ◽  
J. Jiménez
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Gaas Laser

High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Razeghi ◽  
J. Diaz ◽  
H. J. Yi ◽  
D. Wu ◽  
B. Lane ◽  
...  
Keyword(s):  
Active Region ◽  
Energy Gap ◽  
Maximum Output Power ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Maximum Output ◽  
Double Heterostructure

ABSTRACTWe report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70 % up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78 K were achieved from the double-heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the use of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

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