Improvement of type-I method for observing magnetic contrast using scanning electron microscope under tilting-deceleration condition

Under the scanning electron microscope, the characteristics of the buccal surface enamel of human non-erupted deciduous molars were evaluated after using 15, 30, and 45 seconds of phosphoric acid etching time. The teeth were extracted, kept in a 70% alcohol solution and later dehydrated and metallized for analysis with the scanning electron microscope JEOL, JSM-6.100. The in vitro experiment with 35% phosphoric acid revealed that there is a tendency of predominance of interprismatic enamel dissolution or type II pattern with 15 and 45 seconds etching time. The dissolution of the interprismatic enamel was more pronounced when an acid etching time of 45 seconds was used. The enamel surface demonstrated type I and type II patterns when acid etching time was 30 seconds

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Microcraters in Lunar Samples

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100067108 ◽

1970 ◽

Vol 28 ◽

pp. 22-23 ◽

Cited By ~ 3

Author(s):

David S. McKay

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Central Area ◽

Type I ◽

Small Glass ◽

Rock Mineral ◽

Lunar Samples ◽

The Impact ◽

Scanning Electron

Introduction. Samples of rock, mineral, and glass fragments returned by Apollo 11 and 12 contain a variety of microcraters which were formed by the impacts of small projectiles. The craters are especially prominent in some of the small glass spherules and related forms.Crater types. It is possible to classify these microcraters on the basis of morphology as seen by the scanning electron microscope. Type I microcraters (Figure 1) show the following characteristics:A. A glassy central area is present which has been melted by the impact. This glass is primarily material from the target but may also contain melted projectile material. The central area is normally very smooth and may or may not have a smooth raised lip.

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On the quality of type 1 magnetic contrast obtained in the scanning electron microscope

phys stat sol (a) ◽

10.1002/pssa.2210360225 ◽

1976 ◽

Vol 36 (2) ◽

pp. 647-657 ◽

Cited By ~ 18

Author(s):

G. A. Jones

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Magnetic Contrast ◽

Scanning Electron

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Electron detection modes and their relation to linewidth measurement in the Scanning Electron Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144668 ◽

1986 ◽

Vol 44 ◽

pp. 646-649 ◽

Cited By ~ 3

Author(s):

M. T. Postek

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Primary Electron ◽

Type I ◽

Sample Type ◽

Secondary Electrons ◽

Basic Premise ◽

Backscattered Electrons ◽

Linewidth Measurement ◽

Scanning Electron

The basic premise underlying the use of the scanning electron microscope (SEM) for linewidth measurement for semiconductor research and production applications is that the video image acquired, displayed, and ultimately measured reflects accurately the structure of interest. It should be understood that not all the secondary electrons detected originate at the point of impact with the primary electron beam. Those that do are referred to as Type I electrons. Some of the signal is contributed by re-emergent backscattered electrons creating secondary electrons at the surface of the sample (Type II electrons) and at the final lens polepiece (Type III electrons). Other signal contributions include line-of-sight backscattered electrons and other sources particular to each instrument (Type IV electrons). The effects of these four types of contributions to the actual image or linewidth measurement have not been fully evaluated. In measurement applications, error due to the actual location of signal origination will not affect pitch measurements as the errors cancel. However, in linewidth measurement, the errors are additive and thus give twice the edge detection error to the measured width. The basic intent of this work is to demonstrate the magnitude of these errors relative to the mode of signal detection at a variety of beam acceleration voltages.

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