Effect of Tb Doping on Structural and Electrical Properties of BiFeO3 Thin Films Prepared by Sol–Gel Technique

2014 ◽  
Vol 30 (4) ◽  
pp. 365-370 ◽  
Author(s):  
Guohua Dong ◽  
Guoqiang Tan ◽  
Wenlong Liu ◽  
Ao Xia ◽  
Huijun Ren
2015 ◽  
Vol 77 (21) ◽  
Author(s):  
Maziati Akmal ◽  
Umar Al-Amani ◽  
Mohd Warikh ◽  
Nurul Azuwa

Yttrium- doped KNN thin films were grown on Si substrates using the sol-gel technique. The profound effects of Yttrium with different content element (mol % = 0, 0.1, 0.3, 0.5, 0.7 and 0.9) on the structural and electrical properties of KNN films were analyzed. The doped samples demonstrated a mainly uniform and homogenous microstructure with grain size less than 100 nm. The existence of Y Kα line shown in EDX spectrum confirmed the presence of Y-dopant in KNN based-compound. Small shift position of the Raman peaks indicated that Y incorporated on the interstitial A-site while broaden FWHM ascribed that Y preferably enters B-site lattice at high dopant concentration. The enhanced electrical resistivity at 0.5 mol % Y suggested that more conduction electrons were formed in KNN lattice structure.


2011 ◽  
Vol 61 (4) ◽  
pp. 391-397
Author(s):  
Eun Sun KIM ◽  
Jin Won KIM ◽  
Dalhyun DO ◽  
Sang Su KIM*

1997 ◽  
Vol 82 (2) ◽  
pp. 865-870 ◽  
Author(s):  
Radhouane Bel Hadj Tahar ◽  
Takayuki Ban ◽  
Yutaka Ohya ◽  
Yasutaka Takahashi

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