TEM, XRD and nanoindentation characterization of Xenon ion irradiation damage in austenitic stainless steels

2014 ◽  
Vol 454 (1-3) ◽  
pp. 168-172 ◽  
Author(s):  
H.F. Huang ◽  
J.J. Li ◽  
D.H. Li ◽  
R.D. Liu ◽  
G.H. Lei ◽  
...  
2011 ◽  
Vol 1363 ◽  
Author(s):  
Josh Kacher ◽  
Grace S. Liu ◽  
May Martin ◽  
I.M. Robertson

ABSTRACTThe effects of ion irradiation damage on dislocation generation and propagation in austenitic stainless steels were studied by means of in situ transmission electron microscopy and electron tomography. Tensile samples were irradiated in situ to a dose on the order of 1017 ions/m2 with 1MeV Kr+ and strained at 300 K as well as 673 K. Dislocation motion through the irradiation-obstacle field was jerky and discontinuous, dislocation pile-ups formed in grain interiors and at boundaries, long straight dislocations were generated decorating the channel-matrix walls, and dislocation cross-slip within the channel created debris along the channel leading to channel widening. Electron tomography was applied for the first time to reveal new detail about the dislocation reactions in the channel wall.


1991 ◽  
Vol 179-181 ◽  
pp. 526-528 ◽  
Author(s):  
Jiguang Sun ◽  
Jiapu Qian ◽  
Zhuoyong Zhao ◽  
Jiming Chen ◽  
Zengyu Xu

2015 ◽  
Vol 30 (9) ◽  
pp. 1473-1484 ◽  
Author(s):  
Clarissa A. Yablinsky ◽  
Ram Devanathan ◽  
Janne Pakarinen ◽  
Jian Gan ◽  
Daniel Severin ◽  
...  

Abstract


1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.


2008 ◽  
Author(s):  
Tammana Jayakumar ◽  
Anish Kumar ◽  
Baldev Raj ◽  
Donald O. Thompson ◽  
Dale E. Chimenti

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