Vertical plication: A penile curvature correction technique that reduces the need for urethral plate transection in penoscrotal hypospadias

Author(s):  
Süleyman Cüneyt Karakuş ◽  
Alev Süzen
2012 ◽  
Vol 38 (2) ◽  
pp. 242-249 ◽  
Author(s):  
Carlos Teodósio Da Ros ◽  
Túlio Meyer Graziottin ◽  
Eduardo Ribeiro ◽  
Márcio Augusto Averbeck

2006 ◽  
Vol 29 (5) ◽  
pp. 515-520 ◽  
Author(s):  
G.-L. Hsu ◽  
C.-H. Hsieh ◽  
H.-S. Wen ◽  
P.-Y. Ling ◽  
S.-Y. Chen ◽  
...  

2021 ◽  
pp. 205141582110593
Author(s):  
Pankaj M Joshi ◽  
Marco Bandini ◽  
Guido Barbagli ◽  
Manuel Hevia ◽  
Francesco Montorsi ◽  
...  

Background: To lift the neurovascular bundle (NVB) is a critical step during dorsal plications for ventral penile curvature correction. Indeed, this procedure may hesitate in nerves and vascular damage. Herein, we present a revolutionary approach of partial NVB mobilisation that avoids dissection among 10 and 2 o’clock positions decreasing the risk of injuring nerves and vessels. Methods: We assessed ventral penile curvature after penile degloving, marking the level of maximal bending. Bilateral para urethral incisions were made and the Buck’s fascia carefully mobilised from the tunica albuginea. The mobilisation of NVB was carried until 10 and 2 o’clock, avoiding the area between 10 and 2 o’clock positions, where nerves and vessels are more concentrated. The 10 and 2 o’clock positions correspond also to the dorsal edges of the two cavernosa cylinders, where plications are more effective. Penile straightening after surgery was defined as residual curvature less than 10 degrees. Results: Between 2016 and 2020, we have operated 33 men and 32 boys with ventral penile curvature. The severity of penile curvature was mid (<30 degrees) in 13 (20%) patients, moderate (30–60 degrees) in 33 (51%) patients, and severe (> 60 degrees) in 19 (29%) patients. Penile straight was achieved for all patients. We recorded three haematoma, three glans skin erosion, and one curvature recurrence after 13 months of follow-up. No patient reported erectile dysfunction. Conclusion: This proof-of-concept study shows that partial NVB mobilisation is technically easier and safer compared to complete NVB mobilisation, without compromising the success of surgery. Level of evidence: Not applicable


2019 ◽  
Vol 16 (5) ◽  
pp. S75
Author(s):  
R. Ortiz Perojo ◽  
C. Lahoz García ◽  
S. Díaz Naranjo

2005 ◽  
Vol 1 ◽  
pp. 181-184
Author(s):  
O. Mitrea ◽  
C. Popa ◽  
A. M. Manolescu ◽  
M. Glesner

Abstract. This paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the VBE(T ) expansion by using the current of an autopolarizedWidlar source and a small correction current generated by a MOSFET biased in weak inversion. The voltage reference has been fabricated in a 0.35µm 3Metal/2Poly CMOS technology and the chip area is approximately 70µm × 110µm. The measured temperature coefficient is about 10.5 ppm/K over a temperature range of 10– 90°C while the power consumption is less than 1.4mW.


2009 ◽  
Vol 18 (03) ◽  
pp. 519-534 ◽  
Author(s):  
COSMIN POPA

Two voltage reference circuits will be presented. For the first circuit, the linear compensation of V GS (T) for an MOS transistor in subthreshold region will be realized using an original offset voltage follower block as PTAT voltage generator, with the advantages of reducing the silicon area and of increasing accuracy by replacing matched resistors with matched transistors. A new logarithmic curvature-correction technique will be implemented using an asymmetric differential amplifier for compensating the logarithmic temperature dependent term from V GS (T). Because of the operation in weak inversion of all MOS transistors, the circuit will have a very small current consumption, making it compatible with low-power low-voltage designs. The simulated temperature coefficient of the reference voltage for V DD = 2.5 V and a temperature range 0 < t < 30° C is 36.5 ppm/K, confirming the theoretical estimations. The variation of the reference voltage with respect to the supply voltage is 1.5 mV/V for 2–4 V. The circuit current consumption is about 1 μA and the minimal supply voltage is 2 V. The main goal of the second proposed voltage reference is to improve the temperature behavior of a previous reported bipolar voltage reference, by replacing the bipolar transistors with MOS transistors working in weak inversion, with the advantage of obtaining the compatibility with CMOS technology. The new proposed curvature-correction technique will be based on the compensation of the nonlinear temperature dependence of the gate-source voltage for a subthreshold operated MOS transistor by a correction current obtained by taking the difference between two gate-source voltages for MOS transistors biased at drain currents with different temperature dependencies. The circuit is implemented in 0.35 μm CMOS technology. The SPICE simulation confirms the theoretical estimated results, reporting a temperature coefficient of 4.23 ppm/K for the commercial temperature range, 0 < t < 70° C and a small supply voltage, V DD = 2.5 V . The variation of the reference voltage with respect to the supply voltage is 0.9 mV/V for 2–4 V.


2018 ◽  
Vol 15 (7) ◽  
pp. S185
Author(s):  
R. Ortiz Perojo ◽  
C. Lahoz Garcia ◽  
S. Diaz Naranjo ◽  
I. Moya Villalvilla ◽  
E. Velasco Sastre ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document