Reverse bandgaps generate PVT-independent reference voltages by means of the sums of pairs of currents over individual matched resistors: one (CTAT) current is proportional to VEB; the other one (PTAT) is proportional to VT (Thermal voltage). Design guidelines and techniques for a CMOS low-power reverse bandgap reference are presented and discussed in this paper. The paper explains firstly how to design the components of the bandgap branches to minimize circuit current. Secondly, error amplifier topologies are studied in order to reveal the best one, depending on the operation conditions. Finally, a low-voltage bandgap in 65 nm CMOS with 5 ppm/°C, with a DC PSR of −91 dB, with power consumption of 5.2 μW and with an area of 0.0352 mm2 developed with these techniques is presented.
A CMOS bandgap reference based on switched capacitor with temperature compensation method
