Valence and origin of metal–insulator transition in Mn doped SrRuO3 studied by electrical transport, X-ray photoelectron spectroscopy and LSDA+U calculation

2011 ◽  
Vol 184 (3) ◽  
pp. 523-530 ◽  
Author(s):  
Ranjan K. Sahu ◽  
Sudhir K. Pandey ◽  
L.C. Pathak
2011 ◽  
Vol 83 (11) ◽  
Author(s):  
Y. Nakatsu ◽  
A. Sekiyama ◽  
S. Imada ◽  
Y. Okamoto ◽  
S. Niitaka ◽  
...  

2010 ◽  
Vol 79 (4) ◽  
pp. 044713 ◽  
Author(s):  
Shigemasa Suga ◽  
Akira Sekiyama ◽  
Masaaki Obara ◽  
Junichi Yamaguchi ◽  
Masato Kimura ◽  
...  

1992 ◽  
Vol 46 (23) ◽  
pp. 14975-14984 ◽  
Author(s):  
M. Medarde ◽  
A. Fontaine ◽  
J. L. García-Muñoz ◽  
J. Rodríguez-Carvajal ◽  
M. de Santis ◽  
...  

2012 ◽  
Vol 63 (4) ◽  
pp. 270-272 ◽  
Author(s):  
Vladimír Štrbík ◽  
Štefan Chromik

Characterization of Electrical Transport in Lsmo with Enhanced Temperature of Metal-Insulator TransitionWe have studied La0.67Sr0.33MnO3(LSMO) thin films with temperature of metal-insulator (TMI) transition enhanced to above 400 K, and we estimated characteristic electrical transport mechanisms for these films. We have fitted the measured resistivity vs. temperature ρ(T) dependence in a wide temperature range 4-500 K using different mechanisms of the electrical transport in different parts of ρ(T). In addition to the narrow temperature range aroundTMIvery well agreement was found. We found out that the Debye's temperature was also increased (ΘD≈ 840 K) probably due to the change in crystallization of LSMO films.


2007 ◽  
Vol 76 (20) ◽  
Author(s):  
Hiroki Wadati ◽  
Kiyohisa Tanaka ◽  
Atsushi Fujimori ◽  
Takashi Mizokawa ◽  
Hiroshi Kumigashira ◽  
...  

1973 ◽  
Vol 46 (1) ◽  
pp. 29-30 ◽  
Author(s):  
S. Endo ◽  
T. Mitsui ◽  
T. Miyadai

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