Characterization of Electrical Transport in Lsmo with Enhanced Temperature of Metal-Insulator Transition

Characterization of Electrical Transport in Lsmo with Enhanced Temperature of Metal-Insulator TransitionWe have studied La0.67Sr0.33MnO3(LSMO) thin films with temperature of metal-insulator (TMI) transition enhanced to above 400 K, and we estimated characteristic electrical transport mechanisms for these films. We have fitted the measured resistivity vs. temperature ρ(T) dependence in a wide temperature range 4-500 K using different mechanisms of the electrical transport in different parts of ρ(T). In addition to the narrow temperature range aroundTMIvery well agreement was found. We found out that the Debye's temperature was also increased (ΘD≈ 840 K) probably due to the change in crystallization of LSMO films.

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Operando characterization of conductive filaments during resistive switching in Mott VO2

Proceedings of the National Academy of Sciences ◽

10.1073/pnas.2013676118 ◽

2021 ◽

Vol 118 (9) ◽

pp. e2013676118

Author(s):

Shaobo Cheng ◽

Min-Han Lee ◽

Xing Li ◽

Lorenzo Fratino ◽

Federico Tesler ◽

...

Keyword(s):

Resistive Switching ◽

Vanadium Dioxide ◽

Electrical Transport ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Neuromorphic Computing ◽

Metal Insulator ◽

Transmission Electron

Vanadium dioxide (VO2) has attracted much attention owing to its metal–insulator transition near room temperature and the ability to induce volatile resistive switching, a key feature for developing novel hardware for neuromorphic computing. Despite this interest, the mechanisms for nonvolatile switching functioning as synapse in this oxide remain not understood. In this work, we use in situ transmission electron microscopy, electrical transport measurements, and numerical simulations on Au/VO2/Ge vertical devices to study the electroforming process. We have observed the formation of V5O9 conductive filaments with a pronounced metal–insulator transition and that vacancy diffusion can erase the filament, allowing for the system to “forget.” Thus, both volatile and nonvolatile switching can be achieved in VO2, useful to emulate neuronal and synaptic behaviors, respectively. Our systematic operando study of the filament provides a more comprehensive understanding of resistive switching, key in the development of resistive switching-based neuromorphic computing.

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Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

RSC Advances ◽

10.1039/c7ra10865f ◽

2018 ◽

Vol 8 (10) ◽

pp. 5158-5165 ◽

Cited By ~ 9

Author(s):

Y.-R. Jo ◽

S.-H. Myeong ◽

B.-J. Kim

Keyword(s):

Sol Gel ◽

Insulator Transition ◽

In Situ Characterization ◽

Metal Insulator Transition ◽

Metal Insulator ◽

Nanowire Device ◽

Sol Gel Synthesis

The single-VO2 nanowire device synthesized via sequential morphological evolutions with oxygen reduction during annealing features a sharp metal-insulator transition.

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Valence and origin of metal–insulator transition in Mn doped SrRuO3 studied by electrical transport, X-ray photoelectron spectroscopy and LSDA+U calculation

Journal of Solid State Chemistry ◽

10.1016/j.jssc.2011.01.005 ◽

2011 ◽

Vol 184 (3) ◽

pp. 523-530 ◽

Cited By ~ 7

Author(s):

Ranjan K. Sahu ◽

Sudhir K. Pandey ◽

L.C. Pathak

Keyword(s):

Photoelectron Spectroscopy ◽

Electrical Transport ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator ◽

X Ray ◽

Mn Doped

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Correction: Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

RSC Advances ◽

10.1039/c8ra90075b ◽

2018 ◽

Vol 8 (56) ◽

pp. 31984-31984

Author(s):

Y.-R. Jo ◽

S.-H. Myeong ◽

B.-J. Kim

Keyword(s):

Annealing Temperature ◽

Sol Gel ◽

Insulator Transition ◽

In Situ Characterization ◽

Metal Insulator Transition ◽

Metal Insulator ◽

Sol Gel Synthesis

Correction for ‘Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition’ by Y.-R. Jo et al., RSC Adv., 2018, 8, 5158–5165.

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