A nonlinear resistive switching behaviors of Ni/HfO2/TiN memory structures for self-rectifying resistive switching memory

Switching Memory ◽

Memory Structures

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) ◽

The influence of ozone pre-treatment in HfO2-based resistive switching memory structures

10.1109/asdam.2016.7805940 ◽

2016 ◽

Author(s):

P. Benko ◽

M. Mikolasek ◽

L. Harmatha ◽

K. Frohlich

Keyword(s):

Resistive Switching ◽

Pre Treatment ◽

Switching Memory ◽

Memory Structures

A versatile multifaceted resistive switching memory activated by light and ion irradiation in poly (3-octylthiophene)-zinc oxide hybrids

Organic Electronics ◽

10.1016/j.orgel.2020.105932 ◽

2020 ◽

Vol 87 ◽

pp. 105932 ◽

Cited By ~ 1

Author(s):

Jitendra Singh ◽

R.G. Singh ◽

Subodh K. Gautam ◽

Himanshi Gupta ◽

Fouran Singh

Keyword(s):

Zinc Oxide ◽

Resistive Switching ◽

Ion Irradiation ◽

Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021)

Advanced Electronic Materials ◽

10.1002/aelm.202170015 ◽

2021 ◽

Vol 7 (5) ◽

pp. 2170015

Author(s):

Yu‐Chuan Shih ◽

Ling Lee ◽

Kai‐De Liang ◽

Arumugam Manikandan ◽

Wen‐Wu Liu ◽

...

Keyword(s):

Resistive Switching ◽

Single Crystalline ◽

Polymer Nanocomposites for Resistive Switching Memory

Polymer Nanocomposite Materials ◽

10.1002/9783527826490.ch8 ◽

2021 ◽

pp. 211-246

Author(s):

Qazi Muhammad Saqib ◽

Muhammad Umair Khan ◽

Jinho Bae

Keyword(s):

Polymer Nanocomposites ◽

Resistive Switching ◽

Spray-Coated, Volatile and Nonvolatile, Two-Terminal, Resistive Switching Memory Devices Comprising Liquid-Exfoliated Black Phosphorus and Graphene Layers

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3029552 ◽

2020 ◽

Vol 67 (12) ◽

pp. 5484-5489

Author(s):

Yooyeon Jo ◽

Christos Dimitrakopoulos

Keyword(s):

Resistive Switching ◽

Black Phosphorus ◽

Memory Devices ◽

Graphene Layers ◽

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

IEEE Electron Device Letters ◽

10.1109/led.2013.2278098 ◽

2013 ◽

Vol 34 (10) ◽

pp. 1265-1267 ◽

Cited By ~ 14

Author(s):

Shih-Chieh Wu ◽

Hsien-Tsung Feng ◽

Ming-Jiue Yu ◽

I-Ting Wang ◽

Tuo-Hung Hou

Keyword(s):

Resistive Switching ◽

Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

IEEE Electron Device Letters ◽

10.1109/led.2010.2055828 ◽

2010 ◽

Vol 31 (9) ◽

pp. 1020-1022 ◽

Cited By ~ 18

Author(s):

C. H. Cheng ◽

Albert Chin ◽

F. S. Yeh

Keyword(s):

Resistive Switching ◽

Ultralow Power ◽

Abnormal Volatile Memory Characteristic in Normal Nonvolatile ZnSnO Resistive Switching Memory

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2831906 ◽

2018 ◽

Vol 65 (7) ◽

pp. 2812-2819 ◽

Cited By ~ 4

Author(s):

Chih-Chieh Hsu ◽

Yu-Ting Chen ◽

Po-Yang Chuang ◽

Yu-Sheng Lin

Keyword(s):

Resistive Switching ◽

Memory Characteristic ◽

Volatile Memory ◽

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

ECS Transactions ◽

10.1149/07202.0025ecst ◽

2016 ◽

Vol 72 (2) ◽

pp. 25-33 ◽

Cited By ~ 4

Author(s):

Y.-C. Chen ◽

Y.-F. Chang ◽

X. Wu ◽

M. Guo ◽

B. Fowler ◽

...

Keyword(s):

Resistive Switching ◽

Memory Devices ◽

A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

IEEE Electron Device Letters ◽

10.1109/led.2012.2210856 ◽

2012 ◽

Vol 33 (10) ◽

pp. 1405-1407 ◽

Cited By ~ 129

Author(s):

Ximeng Guan ◽

Shimeng Yu ◽

H.-S. Philip Wong

Keyword(s):

Metal Oxide ◽

Resistive Switching ◽

Compact Model ◽