Low temperature thermal oxidation synthesis of ZnO nanoneedles and the growth mechanism

2009 ◽  
Vol 115 (1) ◽  
pp. 74-79 ◽  
Author(s):  
Wen Yu ◽  
Chunxu Pan
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
Growth Mechanism ◽  
Oxidation Synthesis

One-step thermal oxidation synthesis of large-area Mn3O4 nanoflakes at low temperature in air atmosphere

Rare Metals ◽  
2014 ◽  
Vol 39 (12) ◽  
pp. 1469-1472
Author(s):  
Ming-Long Zhong ◽  
Bin Yang ◽  
Cheng-Jun Guo ◽  
Hai-Ping Huang ◽  
Bai-Xiong Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
Large Area ◽  
Air Atmosphere ◽  
One Step ◽  
Oxidation Synthesis

Low-temperature-controlled synthesis and growth mechanism of AlN whiskers

2015 ◽  
Vol 19 (sup2) ◽  
pp. S2-108-S2-112 ◽  
Author(s):  
B. Peng ◽  
G. B. Qiu ◽  
C. S. Yue ◽  
X. M. Hou ◽  
L. Z. Gou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Growth Mechanism ◽  
Controlled Synthesis ◽  
Temperature Controlled

scholarly journals Influence of Low Temperature-Grown GaAs on Lateral Thermal Oxidation of Al0.98Ga0.02As

2000 ◽  
Vol 623 ◽  
Author(s):  
J. C. Ferrer ◽  
Z. Liliental-Weber ◽  
H. Reese ◽  
Y.J. Chiu ◽  
E. Hu
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Gaas Layer ◽  
Transmission Electron ◽  
Low Temperature Gaas ◽  
Reference Samples ◽  
Thermal Oxidation Process ◽  
Low Temperature Grown Gaas

AbstractThe lateral thermal oxidation process of Al0.98Ga0.02As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al0.98Ga0.02As has been shown to result in better quality of the oxide/GaAs interfaces compared to reference samples. While the later have As precipitation above and below the oxide layer and roughness and voids at the oxide/GaAs interface, the structures with low-temperature have less As precipitation and develop interfaces without voids. These results are explained in terms of the diffusion of the As toward the low temperature layer. The effect of the addition of a Si02 cap layer is also discussed.

Study on Synthesis of the High Aspect Ratios Nesquehonite Whiskers

2011 ◽  
Vol 239-242 ◽  
pp. 1118-1122 ◽  
Author(s):  
Ping Ke Yan ◽  
Bin Wang ◽  
Yu Juan Gao
Keyword(s):  
Aqueous Solution ◽  
Reaction Time ◽  
Low Temperature ◽  
Growth Mechanism ◽  
Reaction Temperature ◽  
Solution Method ◽  
Temperature Reaction ◽  
Aspect Ratios ◽  
Whisker Length ◽  
Aqueous Solution Method

In this paper, nesquehonite whiskers were synthesized by low-temperature aqueous solution method, and the impacts of reaction temperature, reaction time and surfactant dosage and other factors on the maximum whisker length and high aspect ratios of nesquehonite whiskers were also investigated. Results showed that under the conditions that the reaction temperature was 40 – 50 °C the reaction time was 50 – 60min and the amount of surfactant dosage was 1% (by mass), high aspect ratios nesquehonite whisker products can be synthesized. On this basis, growth mechanism of the nesquehonite whiskers was discussed.

Oxidation of polyethylene under irradiation at low temperature and low dose rate. Part II. Low temperature thermal oxidation

2006 ◽  
Vol 91 (7) ◽  
pp. 1598-1605 ◽  
Author(s):  
N. Khelidj ◽  
X. Colin ◽  
L. Audouin ◽  
J. Verdu ◽  
C. Monchy-Leroy ◽  
...  
Keyword(s):  
Low Temperature ◽  
Dose Rate ◽  
Thermal Oxidation ◽  
Low Dose ◽  
Low Dose Rate

Growth mechanism of Ni on Pt(110) at low temperature

1996 ◽  
Vol 92 ◽  
pp. 74-78 ◽  
Author(s):  
C.S. Shern ◽  
J.S. Tsay ◽  
Tsu-yi Fu
Keyword(s):  
Low Temperature ◽  
Growth Mechanism

Growth mechanism for thin autoepitaxial silicon layers grown in a low-temperature chloride process

1979 ◽  
Vol 22 (2) ◽  
pp. 157-161
Author(s):  
I. V. Ivonin ◽  
L. M. Krasil'nikova ◽  
L. G. Lavrent'eva ◽  
B. V. Orion ◽  
I. M. Skvortsov
Keyword(s):  
Low Temperature ◽  
Growth Mechanism ◽  
Chloride Process
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