Effect of electric field on doped amorphous silicon thin films during Ni induced lateral crystallization

2013 ◽  
Vol 93 ◽  
pp. 233-236 ◽  
Author(s):  
Ji-Su Ahn ◽  
Deok-kee Kim ◽  
Seung-Ki Joo
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Lateral Crystallization

A Study on the Metal Induced Lateral Crystallization Behavior of Amorphous Silicon Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
Byung-Il Lee ◽  
Kwang-Ho Kim ◽  
Won-Cheol Jeong ◽  
Pyung-Su Ahn ◽  
Jin-Wook Shin ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Crystallization Behavior ◽  
Crystallization Rate ◽  
External Stress ◽  
Tem Analysis ◽  
Silicon Thin Films ◽  
Amorphous Si ◽  
Lateral Crystallization ◽  
Si Films

AbstractBasic mechanisms for both Ni- and Pd-metal induced lateral crystallization (MILC) are investigated. For both cases, tiny silicides were formed under the metal deposited area, and propagated toward amorphous Si films leaving crystallized Si behind at temperatures as low as 500 °C. Ni-MILC was influenced by Pd such that the lateral crystallization rate was enhanced, and the temperature for the lateral crystallization was lowered to 450 °C. Through TEM analysis and external stress experiments, it was found that the enhancement of the lateral crystallization rate was closely related to the compressive stress generated by the formation of nearby Pd2Si.

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

Effect of compressive stress on nickel-induced lateral crystallization of amorphous silicon thin films

2012 ◽  
Vol 520 (7) ◽  
pp. 2984-2988 ◽  
Author(s):  
S.Y. Huang ◽  
H.L. Lin ◽  
C.G. Chao ◽  
T.F. Liu
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Compressive Stress ◽  
Silicon Thin Films ◽  
Lateral Crystallization

In situ observation of nickel metal-induced lateral crystallization of amorphous silicon thin films

2002 ◽  
Vol 80 (6) ◽  
pp. 944-946 ◽  
Author(s):  
Mitsutoshi Miyasaka ◽  
Kenji Makihira ◽  
Tanemasa Asano ◽  
Efstathios Polychroniadis ◽  
John Stoemenos
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
In Situ Observation ◽  
Nickel Metal ◽  
Silicon Thin Films ◽  
Lateral Crystallization

Aluminum-induced lateral crystallization of amorphous silicon thin films

2000 ◽  
Author(s):  
Rui Rao ◽  
Zhongyang Xu ◽  
Xuecheng Zou ◽  
Guocai Sun
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Lateral Crystallization
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