Electroless copper deposition using 3 mercapto propionic acid as an additive

Author(s):  
S. Absara Fdo ◽  
P. Venkatesh ◽  
P. BalaRamesh
2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.


2000 ◽  
Vol 12 (6) ◽  
pp. 1628-1633 ◽  
Author(s):  
Yot Boontongkong ◽  
Robert E. Cohen ◽  
Michael F. Rubner

2000 ◽  
Vol 50 (1-4) ◽  
pp. 441-447 ◽  
Author(s):  
Yuri Lantasov ◽  
Roger Palmans ◽  
Karen Maex

1990 ◽  
Vol 281 (1-2) ◽  
pp. 273-277
Author(s):  
J.J. Podestá ◽  
J.C. Canullo ◽  
A.J. Arvia ◽  
A.G. Alvarez

2003 ◽  
Vol 150 (3) ◽  
pp. C125 ◽  
Author(s):  
Chien-Liang Lee ◽  
Chi-Chao Wan ◽  
Yun-Yung Wang

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