A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.

Electrochemical Oxidation of High-Concentration Ozone Generation in Flowing Water Through Boron Doped Diamond Electrodes

Because of its stable crystal structure, a boron-doped diamond (BDD) has been attracting great attention as a promising material for a next-generation electrode. For instance, the BDD is a wellknown candidate to be exploited as an electrode for the ozone generation with its longer life-time. In this study, we have evaluated ozone-generating characteristics of the BDD electrodes related to the doping concentration of boron. In the experiment, morphology of surface was observing by scanning electron microscopy (SEM) and structural-chemical properties of the synthesized diamond layers were characterized by Raman spectroscopy. Conductivity, carrier concentration, and Hall mobility were determined by a Sheet resistance measurement and Hall effect measurement performed based on the van der Pauw method. The ozone concentration in the water was measured using an ozone colorimeter with DPD reagent.

Positron Annihilation in TaN Thin Sputtering Films Prepared with Various N2 Partial Pressures

Tantalum nitride (TaN) thin films were deposited using magnetron sputtering method under different N2/Ar ratio condition. Slow positron beam was used to analyze the microstructure of those films. The results show that the films which deposited at low N2/Ar flow ratio contain more vacancy-like defects, and the corresponding S parameter is relatively large. The sheet resistance measurement displays that ohms-per-square greatly increase with increased N2/Ar ratio. And the reasons could be related to nonstoichiometry-induced vacancies and lattice distortions.