Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field-effect transistors

Microelectronic Engineering ◽

10.1016/j.mee.2015.11.001 ◽

2016 ◽

Vol 150 ◽

pp. 32-38 ◽

Cited By ~ 9

Author(s):

Brice Le Borgne ◽

Anne-Claire Salaün ◽

Laurent Pichon

Keyword(s):

Electrical Properties ◽

Silicon Nanowires ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors

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(Invited) Dual-Gate and Gate-All-Around Polycrystalline Silicon Nanowires Field Effect Transistors: Simulation and Characterization

ECS Meeting Abstracts ◽

10.1149/ma2018-02/36/1199 ◽

2018 ◽

Keyword(s):

Silicon Nanowires ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Dual Gate

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(Invited) Dual-Gate and Gate-All-Around Polycrystalline Silicon Nanowires Field Effect Transistors: Simulation and Characterization

ECS Transactions ◽

10.1149/08611.0079ecst ◽

2018 ◽

Vol 86 (11) ◽

pp. 79-88

Author(s):

Anne-Claire Salaun ◽

Brice Le Borgne ◽

Laurent Pichon

Keyword(s):

Silicon Nanowires ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Dual Gate

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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors

IEICE Transactions on Electronics ◽

10.1587/transele.e95.c.885 ◽

2012 ◽

Vol E95.C (5) ◽

pp. 885-890 ◽

Cited By ~ 3

Author(s):

Min LIAO ◽

Hiroshi ISHIWARA ◽

Shun-ichiro OHMI

Keyword(s):

Electrical Properties ◽

Growth Mechanism ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors

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Electrical Properties of Thermally Annealed β-Ga2O3 Metal-Semiconductor Field-Effect Transistors with Pt/Au Schottky Contacts

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0231907jss ◽

2019 ◽

Vol 8 (7) ◽

pp. Q3122-Q3125

Author(s):

Suhyun Kim ◽

Jihyun Kim

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Schottky Contacts

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Complementary Photo‐Synapses: Complementary Photo‐Synapses Based on Light‐Stimulated Porphyrin‐Coated Silicon Nanowires Field‐Effect Transistors (LPSNFET) (Small 30/2021)

Small ◽

10.1002/smll.202170156 ◽

2021 ◽

Vol 17 (30) ◽

pp. 2170156

Author(s):

Xiaokang Li ◽

Bocheng Yu ◽

Bowen Wang ◽

Ran Bi ◽

Haixia Li ◽

...

Keyword(s):

Silicon Nanowires ◽

Field Effect ◽

Field Effect Transistors

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Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2/Si structure

Journal of the Ceramic Society of Japan ◽

10.2109/jcersj2.118.1013 ◽

2010 ◽

Vol 118 (1383) ◽

pp. 1013-1016 ◽

Cited By ~ 1

Author(s):

Gwang-Geun LEE ◽

Hui-Seong HAN ◽

Yun-Soo CHOI ◽

Byung-Eun PARK

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Polyvinylidene Fluoride ◽

Field Effect Transistors

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Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

Applied Physics Letters ◽

10.1063/1.5028529 ◽

2018 ◽

Vol 113 (6) ◽

pp. 062103 ◽

Cited By ~ 10

Author(s):

Tae-Eon Bae ◽

Kimihiko Kato ◽

Ryota Suzuki ◽

Ryosho Nakane ◽

Mitsuru Takenaka ◽

...

Keyword(s):

Electrical Properties ◽

Impurity Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors

Applied Surface Science ◽

10.1016/j.apsusc.2019.03.130 ◽

2019 ◽

Vol 481 ◽

pp. 632-636 ◽

Cited By ~ 10

Author(s):

Yu Yang ◽

Jiayan Yang ◽

Wenlei Yin ◽

Fanming Huang ◽

Anyang Cui ◽

...

Keyword(s):

Electrical Properties ◽

Annealing Time ◽

Field Effect ◽

Field Effect Transistors ◽

P Type

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Fabrication of ZnO Nanorods Based Field Effect Transistors and Their Electrical Properties

ECS Meeting Abstracts ◽

10.1149/ma2009-02/27/2226 ◽

2009 ◽

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Zno Nanorods

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Influence of solvent additives on the morphology and electrical properties of diF-TES ADT organic field-effect transistors

Organic Electronics ◽

10.1016/j.orgel.2019.02.021 ◽

2019 ◽

Vol 68 ◽

pp. 205-211 ◽

Cited By ~ 6

Author(s):

Carla Patricia Lacerda Rubinger ◽

Hamna F. Haneef ◽

Corey Hewitt ◽

David Carroll ◽

John E. Anthony ◽

...

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Influence Of Solvent

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