Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors

2012 ◽  
Vol E95.C (5) ◽  
pp. 885-890 ◽  
Author(s):  
Min LIAO ◽  
Hiroshi ISHIWARA ◽  
Shun-ichiro OHMI
Keyword(s):  
Electrical Properties ◽  
Growth Mechanism ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Organic Field Effect Transistors

Ionic Impurities in Poly(vinyl alcohol) Gate Dielectrics and Hysteresis Effects in Organic Field Effect Transistors

2008 ◽  
Vol 1091 ◽  
Author(s):  
Martin Egginger ◽  
Mihai Irimia-Vladu ◽  
Reinhard Schwödiauer ◽  
Andreas Tanda ◽  
Siegfried Bauer ◽  
...  
Keyword(s):  
Vinyl Alcohol ◽  
Field Effect ◽  
Water Solubility ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Poly Vinyl Alcohol ◽  
Organic Field Effect Transistors ◽  
Electronic Circuits ◽  
Metal Insulator Metal ◽  
Ionic Impurities

AbstractPoly(vinyl alcohol) (PVA) is a water based dielectric often used as a coating layer in paper industry. Due to its water solubility PVA is also interesting as gate insulator in organic field effect transistors. Depending on the preparation of the PVA gate, transistors with and without hysteresis can be produced, with applications in organic electronic circuits or memory elements. In the production of PVA, a major side product is sodium acetate, an ionic salt not completely removed during industrial purification. Such ionic impurities likely influence the hysteresis in PVA based organic field effect transistors. While a hysteresis is desirable in memory elements it is unwanted in transistors for electronic circuits. Ways to prepare transistors with a desired transfer characteristic are described, for example by using electronic grade products directly from the purchaser of PVA, or by employing PVA purified by means of dialysis. Measurements are performed with metal-insulator-metal (MIM) structures and organic field effect transistors (OFETs), where Buckminsterfullerene C60 is employed as organic semiconductor.

Influence of solvent additives on the morphology and electrical properties of diF-TES ADT organic field-effect transistors

2019 ◽  
Vol 68 ◽  
pp. 205-211 ◽  
Author(s):  
Carla Patricia Lacerda Rubinger ◽  
Hamna F. Haneef ◽  
Corey Hewitt ◽  
David Carroll ◽  
John E. Anthony ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Influence Of Solvent

scholarly journals Flexible high capacitance nanocomposite gate insulator for printed organic field-effect transistors

2010 ◽  
Vol 518 (23) ◽  
pp. 7024-7028 ◽  
Author(s):  
Amjad Rasul ◽  
Jie Zhang ◽  
Dan Gamota ◽  
Manish Singh ◽  
Christos Takoudis
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Organic Field Effect Transistors ◽  
High Capacitance
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