Characterization of Ge2Sb2Te5 thin film transistor and its application in non-volatile memory

2006 ◽  
Vol 37 (8) ◽  
pp. 841-844 ◽  
Author(s):  
Feifei Liao ◽  
Yiqing Ding ◽  
Yinyin Lin ◽  
Tingao Tang ◽  
Baowei Qiao ◽  
...  
RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8566-8570 ◽  
Author(s):  
Jim-Long Her ◽  
Fa-Hsyang Chen ◽  
Ching-Hung Chen ◽  
Tung-Ming Pan

In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications.


2011 ◽  
Vol 519 (15) ◽  
pp. 5208-5211 ◽  
Author(s):  
W.K. Lee ◽  
K.C. Aw ◽  
H.Y. Wong ◽  
K.Y. Chan ◽  
M. Leung ◽  
...  

2001 ◽  
Vol 45 (8) ◽  
pp. 1433-1440 ◽  
Author(s):  
C. Guerrero ◽  
J. Roldán ◽  
C. Ferrater ◽  
M.V. Garcia-Cuenca ◽  
F. Sánchez ◽  
...  

2009 ◽  
Vol 86 (10) ◽  
pp. 2127-2131 ◽  
Author(s):  
N. Tjitra Salim ◽  
K.C. Aw ◽  
W. Gao ◽  
Z.W. Li ◽  
B. Wright

2008 ◽  
Author(s):  
Arun Suresh ◽  
Steven Novak ◽  
Patrick Wellenius ◽  
Veena Misra ◽  
Leda M. Lunardi ◽  
...  

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