Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range

2012 ◽  
Vol 52 (6) ◽  
pp. 974-983 ◽  
Author(s):  
Vandana Kumari ◽  
Manoj Saxena ◽  
R.S. Gupta ◽  
Mridula Gupta
2020 ◽  
Vol 8 (31) ◽  
pp. 11501-11511 ◽  
Author(s):  
Rui Chen ◽  
Xiubin Xu ◽  
Siyu Peng ◽  
Junmin Chen ◽  
Danfeng Yu ◽  
...  

2017 ◽  
Vol 5 (19) ◽  
pp. 9090-9096 ◽  
Author(s):  
Liang Chang ◽  
Wei Wei ◽  
Kai Sun ◽  
Yun Hang Hu

Na@C electrodes can operate from −10 to 55 °C and exhibit an ultrahigh areal capacitance up to 1.14 F cm−2.


2004 ◽  
Vol 40 (3) ◽  
pp. 173 ◽  
Author(s):  
G. Bertuccio ◽  
R. Casiraghi ◽  
A. Cetronio ◽  
C. Lanzieri ◽  
F. Nava

2015 ◽  
Vol 644 ◽  
pp. 464-469 ◽  
Author(s):  
Yongdeok Kim ◽  
Ki Hoon Kang ◽  
Ju Hwan Kim ◽  
Eun Jeong Kim ◽  
Kwangseok Choi ◽  
...  

2013 ◽  
Vol 50 (26) ◽  
pp. 355-364 ◽  
Author(s):  
M. C. Smart ◽  
C. Hwang ◽  
F. C. Krause ◽  
J. Soler ◽  
W. C. West ◽  
...  

2008 ◽  
Vol 39 (1) ◽  
pp. 962 ◽  
Author(s):  
Vikram Bhatia ◽  
Steven J. Gregorski ◽  
Dragan Pikula ◽  
Satish C. Chaparala ◽  
David A. S. Loeber ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document