Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses

2015 ◽  
Vol 193 ◽  
pp. 189-197 ◽  
Author(s):  
Qiusong Yang ◽  
Zhilong Cai ◽  
Yang Wang ◽  
Huan Huang ◽  
Yiqun Wu
Keyword(s):  
Thin Films ◽  
Femtosecond Laser ◽  
Phase Change ◽  
Phase Change Memory ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Change Memory

Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

2011 ◽  
Vol 128 (3) ◽  
pp. 405-409 ◽  
Author(s):  
Huan Huang ◽  
Simian Li ◽  
Fengxiao Zhai ◽  
Yang Wang ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Pulse ◽  
Phase Change ◽  
Crystallization Behavior ◽  
Phase Change Memory ◽  
Picosecond Laser ◽  
Picosecond Laser Pulse ◽  
Change Memory

Improved phase-change characteristics of Si doped GeSbTe thin films used for phase change memory

2012 ◽  
Vol 358 (17) ◽  
pp. 2402-2404 ◽  
Author(s):  
Liang Tong ◽  
Ling Xu ◽  
Yifan Jiang ◽  
Fei Yang ◽  
Lei Geng ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Characteristics ◽  
Si Doped ◽  
Change Memory

Low Temperature Deposition of Ge Thin Films for Phase Change Memory

2019 ◽  
Vol 11 (7) ◽  
pp. 269-278 ◽  
Author(s):  
Tianniu Chen ◽  
Chongying Xu ◽  
William Hunks ◽  
Matthias Stender ◽  
Gregory T. Stauf ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Phase Change ◽  
Phase Change Memory ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
Change Memory
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