Controlling physical properties of bilayer graphene by stacking orientation caused by interaction between B and N dopant atoms

The interlayer relative dielectric constant, εr, of 2-dimensional (2D) materials in general and graphitic materials in particular is one of their most important physical properties, especially for electronic applications. In this work, we study the electromechanical actuation of nanoscale graphitic contacts.

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The Photometric Properties of the Ap Stars

International Astronomical Union Colloquium ◽

10.1017/s0252921100080684 ◽

1976 ◽

Vol 32 ◽

pp. 365-377 ◽

Cited By ~ 2

Author(s):

B. Hauck

Keyword(s):

Physical Properties ◽

Ap Stars

The Ap stars are numerous - the photometric systems tool It would be very tedious to review in detail all that which is in the literature concerning the photometry of the Ap stars. In my opinion it is necessary to examine the problem of the photometric properties of the Ap stars by considering first of all the possibility of deriving some physical properties for the Ap stars, or of detecting new ones. My talk today is prepared in this spirit. The classification by means of photoelectric photometric systems is at the present time very well established for many systems, such as UBV, uvbyβ, Vilnius, Geneva and DDO systems. Details and methods of classification can be found in Golay (1974) or in the proceedings of the Albany Colloquium edited by Philip and Hayes (1975).

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The Infection of Cells by Bullet-Shaped Viruses

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100063779 ◽

1969 ◽

Vol 27 ◽

pp. 372-373

Author(s):

Frederick A. Murphy ◽

Alyne K. Harrison ◽

Sylvia G. Whitfield

Keyword(s):

Electron Microscopy ◽

Physical Properties ◽

Host Cell ◽

Thin Section ◽

Cultured Cells ◽

Cell Infection ◽

Thin Section Electron Microscopy ◽

Section Electron ◽

Section Electron Microscopy

The bullet-shaped viruses are currently classified together on the basis of similarities in virion morphology and physical properties. Biologically and ecologically the member viruses are extremely diverse. In searching for further bases for making comparisons of these agents, the nature of host cell infection, both in vivo and in cultured cells, has been explored by thin-section electron microscopy.

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Transmission electron microscopy of composite materials

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100107125 ◽

1988 ◽

Vol 46 ◽

pp. 1012-1015

Author(s):

K.P.D. Lagerlof

Keyword(s):

Composite Materials ◽

Physical Properties ◽

Structural Defects ◽

Structural Composites ◽

Multiphase Materials ◽

Structural Reinforcement ◽

Transmission Electron ◽

Reinforced Fiber ◽

Particulate Reinforced Composites ◽

Definition Of

Although most materials contain more than one phase, and thus are multiphase materials, the definition of composite materials is commonly used to describe those materials containing more than one phase deliberately added to obtain certain desired physical properties. Composite materials are often classified according to their application, i.e. structural composites and electronic composites, but may also be classified according to the type of compounds making up the composite, i.e. metal/ceramic, ceramic/ceramie and metal/semiconductor composites. For structural composites it is also common to refer to the type of structural reinforcement; whisker-reinforced, fiber-reinforced, or particulate reinforced composites [1-4].For all types of composite materials, it is of fundamental importance to understand the relationship between the microstructure and the observed physical properties, and it is therefore vital to properly characterize the microstructure. The interfaces separating the different phases comprising the composite are of particular interest to understand. In structural composites the interface is often the weakest part, where fracture will nucleate, and in electronic composites structural defects at or near the interface will affect the critical electronic properties.

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Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010017671x ◽

1990 ◽

Vol 48 (4) ◽

pp. 716-717

Author(s):

I. A. Rauf

Keyword(s):

Thin Films ◽

Indium Oxide ◽

Ionic Radius ◽

Free Carrier ◽

Electron Gun ◽

Periodic Lattice ◽

Oxide Thin Films ◽

Transmission Electron ◽

The Difference ◽

Dopant Atoms

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

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