N-type silicon nanowires prepared by silver metal-assisted chemical etching: Fabrication and optical properties

2019 ◽  
Vol 90 ◽  
pp. 198-204 ◽  
Author(s):  
Le Thanh Cong ◽  
Nguyen Thi Ngoc Lam ◽  
Nguyen Truong Giang ◽  
Pham The Kien ◽  
Nguyen Duc Dung ◽  
...  
2012 ◽  
Vol 7 (6) ◽  
pp. 602-606 ◽  
Author(s):  
K. A. Gonchar ◽  
L. A. Osminkina ◽  
R. A. Galkin ◽  
M. B. Gongalsky ◽  
V. S. Marshov ◽  
...  

Nano Letters ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 2310-2317
Author(s):  
Maxime Gayrard ◽  
Justine Voronkoff ◽  
Cédric Boissière ◽  
David Montero ◽  
Laurence Rozes ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).


2017 ◽  
Vol 32 (4) ◽  
pp. 043004 ◽  
Author(s):  
Alessia Irrera ◽  
Maria Josè Lo Faro ◽  
Cristiano D’Andrea ◽  
Antonio Alessio Leonardi ◽  
Pietro Artoni ◽  
...  

2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.


2021 ◽  
Vol 121 ◽  
pp. 111632
Author(s):  
Le Thanh Cong ◽  
Nguyen Thi Ngoc Lam ◽  
Doan Van Thuong ◽  
Ngo Ngoc Ha ◽  
Nguyen Duc Dung ◽  
...  

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