scholarly journals Replacing Metals with Oxides in Metal-Assisted Chemical Etching Enables Direct Fabrication of Silicon Nanowires by Solution Processing

Nano Letters ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 2310-2317
Author(s):  
Maxime Gayrard ◽  
Justine Voronkoff ◽  
Cédric Boissière ◽  
David Montero ◽  
Laurence Rozes ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Solution Processing ◽  
Direct Fabrication ◽  
Metal Assisted Chemical Etching

scholarly journals Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Catalytic Chemical Vapor Deposition ◽  
Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

Light-emitting silicon nanowires obtained by metal-assisted chemical etching

2017 ◽  
Vol 32 (4) ◽  
pp. 043004 ◽  
Author(s):  
Alessia Irrera ◽  
Maria Josè Lo Faro ◽  
Cristiano D’Andrea ◽  
Antonio Alessio Leonardi ◽  
Pietro Artoni ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Light Emitting ◽  
Metal Assisted Chemical Etching

Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Cross Sections ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Semiconductor Device ◽  
Imprint Lithography ◽  
Wafer Level ◽  
Conventional Photolithography ◽  
Metal Assisted Chemical Etching

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.

Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching

2021 ◽  
Author(s):  
E. Fakhri ◽  
M. T. Sultan ◽  
A. Manolescu ◽  
S. Ingvarsson ◽  
N. Plugaru ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Photoluminescence Study ◽  
Metal Assisted Chemical Etching

Ultrathin Silicon Nanowires Produced by a Bi-Metal-Assisted Chemical Etching Method for Highly Stable Lithium-Ion Battery Anodes

NANO ◽  
2020 ◽  
Vol 15 (06) ◽  
pp. 2050076
Author(s):  
Fang Sun ◽  
Zhiyuan Tan ◽  
Zhengguang Hu ◽  
Jun Chen ◽  
Jie Luo ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Lithium Ion Battery ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
High Capacity ◽  
Lithium Ion ◽  
Average Diameter ◽  
Sei Layer ◽  
Metal Assisted Chemical Etching

Silicon is widely studied as a high-capacity lithium-ion battery anode. However, the pulverization of silicon caused by a large volume expansion during lithiation impedes it from being used as a next generation anode for lithium-ion batteries. To overcome this drawback, we synthesized ultrathin silicon nanowires. These nanowires are 1D silicon nanostructures fabricated by a new bi-metal-assisted chemical etching process. We compared the lithium-ion battery properties of silicon nanowires with different average diameters of 100[Formula: see text]nm, 30[Formula: see text]nm and 10[Formula: see text]nm and found that the 30[Formula: see text]nm ultrathin silicon nanowire anode has the most stable properties for use in lithium-ion batteries. The above anode demonstrates a discharge capacity of 1066.0[Formula: see text]mAh/g at a current density of 300[Formula: see text]mA/g when based on the mass of active materials; furthermore, the ultrathin silicon nanowire with average diameter of 30[Formula: see text]nm anode retains 87.5% of its capacity after the 50th cycle, which is the best among the three silicon nanowire anodes. The 30[Formula: see text]nm ultrathin silicon nanowire anode has a more proper average diameter and more efficient content of SiOx. The above prevents the 30[Formula: see text]nm ultrathin silicon nanowires from pulverization and broken during cycling, and helps the 30[Formula: see text]nm ultrathin silicon nanowires anode to have a stable SEI layer, which contributes to its high stability.

Environmental Sustainability of Metal-Assisted Chemical Etching of Silicon Nanowires for Lithium-Ion Battery Anode

2019 ◽  
Vol 17 (1) ◽  
Author(s):  
Fenfen Wang ◽  
Xianfeng Gao ◽  
Lulu Ma ◽  
Chris Yuan
Keyword(s):  
Lithium Ion Battery ◽  
Silicon Nanowires ◽  
Environmental Sustainability ◽  
Ag Nanoparticles ◽  
Chemical Etching ◽  
Lithium Ion ◽  
Process Data ◽  
Sustainability Performance ◽  
Metal Assisted Chemical Etching ◽  
Si Wafer

Abstract Silicon nanowires (SiNWs) with three different average diameters of 90, 120, and 140 nm were synthesized by a metal-assisted chemical etching (MACE) method. Environmental sustainability of the MACE process was studied by investigating material consumptions, gas emissions, and silver nanoparticle concentrations in nitric acid solutions for 1 g of SiNWs and 1 kW h of lithium-ion battery (LIB) electrodes. It was found that the process for 90 nm SiNWs has the best sustainability performance compared with the other two processes. Specifically, in this study for 1 g of 90 nm SiNWs, 8.845 g of Si wafer is consumed, 1.09 g of H2 and 1.04 g of NO are produced, and 54.807 mg of Ag nanoparticles are found in the HNO3 solution. Additionally, for 1 kW h of LIB electrodes, the process for 90 nm SiNWs results in 1.943 kg of Si wafer consumption, 239.455 g of H2 and 239.455 g of NO emissions, and 12.040 g of Ag nanoparticles concentrations. By quantitatively investigating the material consumptions and emissions, this study assesses the sustainability performance of the MACE process for synthesizing SiNWs for use in LIBs, and thus it provides process data for the analysis and the development of sustainable production methods for SiNWs and similar anode materials for next-generation LIBs.

Ag-Mediated Charge Transport during Metal-Assisted Chemical Etching of Silicon Nanowires

2013 ◽  
Vol 5 (10) ◽  
pp. 4302-4308 ◽  
Author(s):  
Nadine Geyer ◽  
Bodo Fuhrmann ◽  
Hartmut S. Leipner ◽  
Peter Werner
Keyword(s):  
Charge Transport ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Metal Assisted Chemical Etching

Fabrication of flexible silicon nanowires by self-assembled metal assisted chemical etching for surface enhanced Raman spectroscopy

RSC Advances ◽  
2016 ◽  
Vol 6 (96) ◽  
pp. 93649-93659 ◽  
Author(s):  
S. A. Kara ◽  
A. Keffous ◽  
A. M. Giovannozzi ◽  
A. M. Rossi ◽  
E. Cara ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Surface Enhanced Raman Spectroscopy ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Metal Assisted Chemical Etching ◽  
Self Assembled

Flexible silicon nanowires fabricated by nano spheres lithography and metal assisted chemical etching for surface enhanced Raman spectroscopy.

Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching

2014 ◽  
Vol 16 (48) ◽  
pp. 26711-26714 ◽  
Author(s):  
Chia-Yun Chen ◽  
Yu-Rui Liu
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Metal Assisted Chemical Etching ◽  
Kinetics Of

We explored the kinetics of ordered silicon nanowires with the formation of nanogaps prepared using metal-assisted chemical etching.

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