Effects of different cusp magnetic ratios and crucible rotation conditions on oxygen transport and point defect formation during Cz silicon crystal growth

2021 ◽  
Vol 128 ◽  
pp. 105758
Author(s):  
Thi-Hoai-Thu Nguyen ◽  
Jyh-Chen Chen
Keyword(s):  
Crystal Growth ◽  
Point Defect ◽  
Oxygen Transport ◽  
Defect Formation ◽  
Silicon Crystal ◽  
Crucible Rotation

Advanced approach for oxygen transport simulation in Cz silicon crystal growth

2021 ◽  
pp. 126493
Author(s):  
D. Borisov ◽  
V. Artemyev ◽  
V. Kalaev ◽  
A. Smirnov ◽  
A. Kuliev ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Oxygen Transport ◽  
Silicon Crystal ◽  
Transport Simulation

Influence of anisotropic thermal stress during Si crystal growth on intrinsic point defect formation

2017 ◽  
Vol 2017.30 (0) ◽  
pp. 087
Author(s):  
Eiji Kamiyama ◽  
Yoshiaki Abe ◽  
Hironori Banba ◽  
Hiroyuki Saito ◽  
Susumu Maeda ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Point Defect ◽  
Defect Formation ◽  
Intrinsic Point Defect

Numerical simulation of oxygen transport during the CZ silicon crystal growth process

2011 ◽  
Vol 318 (1) ◽  
pp. 318-323 ◽  
Author(s):  
Jyh-Chen Chen ◽  
Ying-Yang Teng ◽  
Wan-Ting Wun ◽  
Chung-Wei Lu ◽  
Hsueh-I Chen ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Crystal Growth ◽  
Oxygen Transport ◽  
Growth Process ◽  
Silicon Crystal ◽  
Crystal Growth Process

A Comparison of Intrinsic Point Defect Properties in Si and Ge

2008 ◽  
Vol 1070 ◽  
Author(s):  
Jan Vanhellemont ◽  
Piotr Spiewak ◽  
Koji Sueoka ◽  
Eddy Simoen ◽  
Igor Romandic
Keyword(s):  
Crystal Growth ◽  
Point Defect ◽  
Point Defects ◽  
Defect Formation ◽  
Lattice Defect ◽  
Intrinsic Point Defect ◽  
Thermal Treatments ◽  
Intrinsic Point Defects ◽  
Device Processing ◽  
Processing Point

ABSTRACTIntrinsic point defects determine to a large extent the semiconductor crystal quality both mechanically and electrically not only during crystal growth or when tuning polished wafer properties by thermal treatments, but also and not the least during device processing. Point defects play e.g. a crucial role in dopant diffusion and activation, in gettering processes and in extended lattice defect formation.Available experimental data and results of numerical calculation of the formation energy and diffusivity of the intrinsic point defects in Si and Ge are compared and discussed. Intrinsic point defect clustering is illustrated by defect formation during Czochralski crystal growth.

Numerical Simulation of Point Defect Distributions in a Growing Czochralski Silicon Crystal in Response to an Abrupt Change in the Growth Conditions

1995 ◽  
Vol 378 ◽  
Author(s):  
W. Wijaranakula ◽  
Q. S. Zhang ◽  
K. Takano ◽  
H. Yamagishi
Keyword(s):  
Numerical Simulation ◽  
Growth Rate ◽  
Crystal Growth ◽  
Point Defect ◽  
Flow Pattern ◽  
Abrupt Change ◽  
Silicon Crystal ◽  
Crystal Growth Rate ◽  
Rate Theory ◽  
Czochralski Silicon

AbstractNumerical simulation of point defect distributions in a growing Czochralski silicon crystal with an abrupt change in the crystal growth rate from 1.0 to 0.4 mm/min was performed. The result was fitted to the experimental data for the flow pattern defects obtained from a crystal grown under simulated conditions. From the simulation result, it was observed that the axial temperature distribution shifts slightly upwards as a result of the growth rate reduction. Based upon the argument that the flow pattern defects are of vacancy-type, it is proposed that the generation rate of the flow pattern defects during crystal growth can be described by the classical nucleation rate theory proposed by Becker [Proc.Phys.Soc., 52, 71(1940)]. In addition, it is suggested that the vacancy concentration in the flow pattern defects depends upon the reaction time between the silicon interstitials and the flow pattern defects and thus the crystal growth rate.

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