A Comparison of Intrinsic Point Defect Properties in Si and Ge

2008 ◽  
Vol 1070 ◽  
Author(s):  
Jan Vanhellemont ◽  
Piotr Spiewak ◽  
Koji Sueoka ◽  
Eddy Simoen ◽  
Igor Romandic
Keyword(s):  
Crystal Growth ◽  
Point Defect ◽  
Point Defects ◽  
Defect Formation ◽  
Lattice Defect ◽  
Intrinsic Point Defect ◽  
Thermal Treatments ◽  
Intrinsic Point Defects ◽  
Device Processing ◽  
Processing Point

ABSTRACTIntrinsic point defects determine to a large extent the semiconductor crystal quality both mechanically and electrically not only during crystal growth or when tuning polished wafer properties by thermal treatments, but also and not the least during device processing. Point defects play e.g. a crucial role in dopant diffusion and activation, in gettering processes and in extended lattice defect formation.Available experimental data and results of numerical calculation of the formation energy and diffusivity of the intrinsic point defects in Si and Ge are compared and discussed. Intrinsic point defect clustering is illustrated by defect formation during Czochralski crystal growth.

Influence of anisotropic thermal stress during Si crystal growth on intrinsic point defect formation

2017 ◽  
Vol 2017.30 (0) ◽  
pp. 087
Author(s):  
Eiji Kamiyama ◽  
Yoshiaki Abe ◽  
Hironori Banba ◽  
Hiroyuki Saito ◽  
Susumu Maeda ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Point Defect ◽  
Defect Formation ◽  
Intrinsic Point Defect

(Invited) Computer Simulation of Intrinsic Point Defect Distribution Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

2018 ◽  
Vol 86 (10) ◽  
pp. 3-24
Author(s):  
Koji Sueoka ◽  
Yuji Mukaiyama ◽  
Koji Kobayashi ◽  
Hiroaki Fukuda ◽  
Shunta Yamaoka ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Crystal Growth ◽  
Point Defect ◽  
Large Diameter ◽  
Intrinsic Point Defect ◽  
Defect Distribution

Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth

2007 ◽  
Vol 131-133 ◽  
pp. 283-288 ◽  
Author(s):  
A.I. Prostomolotov ◽  
N.A. Verezub
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Single Crystal ◽  
Defect Formation ◽  
Integrated Approach ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Intrinsic Point Defect ◽  
Formation Mechanisms ◽  
Growing Conditions

The features of microdefect formation during dislocation-free Si single crystals are considered in connection with the specific thermal CZ growing conditions. For this purpose the thermal crystal growth histories are calculated by means of a global thermal mathematical model and then on their basis the intrinsic point defect recombination and microdefect formation are modeled numerically. Difficulty of such integrated approach is explained by of the complicated and conjugated thermal modeling and a presence of various temperature zones in growing single crystal, answering to various defect formation mechanisms.

Intrinsic Point Defects in Silicon Crystal Growth

2011 ◽  
Vol 178-179 ◽  
pp. 3-14 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Crystal Growth ◽  
Point Defects ◽  
Vacancy Concentration ◽  
Silicon Crystal ◽  
Growth Conditions ◽  
Intrinsic Point Defects ◽  
Silicon Crystals ◽  
Low Concentrations ◽  
Different Populations ◽  
Vacancy Concentrations

In dislocation-free silicon, intrinsic point defects – either vacancies or self-interstitials, depending on the growth conditions - are incorporated into a growing crystal. Their incorporated concentration is relatively low (normally, less than 1014 cm-3 - much lower than the concentration of impurities). In spite of this, they play a crucial role in the control of the structural properties of silicon materials. Modern silicon crystals are grown mostly in the vacancy mode and contain many vacancy-based agglomerates. At typical grown-in vacancy concentrations the dominant agglomerates are voids, while at lower vacancy concentrations there are different populations of joint vacancy-oxygen agglomerates (oxide plates). Larger plates – formed in a narrow range of vacancy concentration and accordingly residing in a narrow spatial band – are responsible for the formation of stacking fault rings in oxidized wafers. Using advanced crystal growth techniques, whole crystals can be grown at such low concentrations of vacancies or self-interstitials such that they can be considered as perfect.

The Role of Carbon and Point Defects in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
U. Gösele
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Carbon Concentration ◽  
Diffusion Mechanism ◽  
Intrinsic Point Defect ◽  
Interstitial Carbon ◽  
Frame Work ◽  
Co Precipitation ◽  
And Diffusion

ABSTRACTAn overview of the behavior of intrinsic point defects in silicon and their interaction with carbon is given for temperatures above about 500° C. The diffusive mechanism of carbon in silicon, which involves silicon self-interstitials, is treated in some detail and compared with the diffusion mechanism of oxygen. The solubility of interstitial carbon is estimated. Co-precipitation of carbon and self-interstitials or oxygen are dealt with in terms of simple volume considerations. It is proposed that the contradicting results on the influence of intrinsic point defect supersaturations on oxygen nucleation and precipitation may possibly be explained in the frame-work of opposite effects depending on the carbon concentration. Finally the influence of carbon on the incorporation and diffusion of gold in silicon is discussed.

The Formation of Defects Degrading Gate Oxide Integrity During CZ-Si Crystal Growth

1995 ◽  
Vol 378 ◽  
Author(s):  
Y. Tsumori ◽  
K. Nakai ◽  
T. Iwasaki ◽  
H. Haga ◽  
K. Kojima ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Point Defects ◽  
Defect Density ◽  
Gate Oxide ◽  
Cooling Time ◽  
Intrinsic Point Defects ◽  
Pair Annihilation ◽  
Temperature Ranges ◽  
Gate Oxide Integrity

AbstractThe formation of grown-in defects degrading the gate oxide integrity (GOI) has been studied. The growth-halting experiments were carried out to investigate the temperature ranges at which the formation of the defects was promoted or suppressed. GOI is improved in the crystal regions slowly cooled above 1330°C and between 1060°C and 1100°C. It is degraded in the crystal regions held below 1060°C. In the peripheral of the crystals, those temperature ranges are about 30°C lower. The defects are formed and grown below 1060°C in the center part of the crystal. The defect density is decreased with cooling time between 1060°C and 1100°C. These phenomena are considered to be closely related with reactions of intrinsic point defects, that is, the pair annihilation or the aggregation. The temperatures at which the pair annihilation and the aggregation of the point defects occur are dependent upon the supersaturation of the point defects.

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