scholarly journals Quasi-1D electronic transport and isotropic phonon transport in the Zintl Ca5In2Sb6

2022 ◽  
pp. 100597
Author(s):  
David M. Smiadak ◽  
Romain Claes ◽  
Nicolas Perez ◽  
Mack Marshall ◽  
Wanyue Peng ◽  
...  
2001 ◽  
Vol 677 ◽  
Author(s):  
A. Khitun ◽  
J.L. Liu ◽  
K.L. Wang ◽  
G. Chen

ABSTRACTWe present a theoretical model in order to describe both thermal and electronic in-plane transports in quantum dot superlattice. The model takes into account the modifications of electron and phonon transport due to the space confinement caused by the mismatch in electronic and thermal properties between dot and host materials. The developed model provides the analysis of the in-plane superlattice electronic and thermal properties versus quantum dot size and their arrangement. Numerical calculations were carried out for a structure that consists of multiple layers of Si with regimented germanium quantum dots. The simulation results of the lattice thermal conductivity are in a good agreement with experimental data.


Author(s):  
Siqi Wang ◽  
Yu Xiao ◽  
Yongjin Chen ◽  
Shang Peng ◽  
Dongyang Wang ◽  
...  

Hierarchical microstructures lead to high thermoelectric performance in Cum+nPb100SbmTe100Se2m (CLAST) through synergistically optimizing carrier and phonon transport.


1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.


2014 ◽  
Vol 17 (N/A) ◽  
pp. 89-145 ◽  
Author(s):  
Sridhar Sadasivam ◽  
Yuhang Che ◽  
Zhen Huang ◽  
Liang Chen ◽  
Satish Kumar ◽  
...  

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