Contrast-to-gradient method for the evaluation of image resolution in scanning electron microscopy

2004 ◽  
Vol 519 (1-2) ◽  
pp. 251-263 ◽  
Author(s):  
Tohru Ishitani ◽  
Mitsugu Sato
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Gradient Method ◽  
Image Resolution ◽  
Scanning Electron

Low-voltage, high-resolution scanning electron microscopy of polymers

1987 ◽  
Vol 45 ◽  
pp. 466-467 ◽  
Author(s):  
S. J. Krause ◽  
W.W. Adams ◽  
S. Kumar ◽  
T. Reilly ◽  
T. Suziki
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Voltage ◽  
Chromatic Aberration ◽  
Image Resolution ◽  
Resolution Limit ◽  
Crossover Point ◽  
New Generation ◽  
Beam Damage ◽  
Scanning Electron

Scanning electron microscopy (SEM) of polymers at routine operating voltages of 15 to 25 keV can lead to beam damage and sample image distortion due to charging. Imaging polymer samples with low accelerating voltages (0.1 to 2.0 keV), at or near the “crossover point”, can reduce beam damage, eliminate charging, and improve contrast of surface detail. However, at low voltage, beam brightness is reduced and image resolution is degraded due to chromatic aberration. A new generation of instruments has improved brightness at low voltages, but a typical SEM with a tungsten hairpin filament will have a resolution limit of about 100nm at 1keV. Recently, a new field emission gun (FEG) SEM, the Hitachi S900, was introduced with a reported resolution of 0.8nm at 30keV and 5nm at 1keV. In this research we are reporting the results of imaging coated and uncoated polymer samples at accelerating voltages between 1keV and 30keV in a tungsten hairpin SEM and in the Hitachi S900 FEG SEM.

LOW-VOLTAGE AND ULTRA-LOW-VOLTAGE SCANNING ELECTRON MICROSCOPY OF SEMICONDUCTOR SURFACES AND DEVICES

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4387-4394 ◽  
Author(s):  
JINGYUE LIU
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Voltage ◽  
Image Resolution ◽  
Sem Images ◽  
Conducting Materials ◽  
Low Energies ◽  
Low Energy Electrons ◽  
Voltage Scanning ◽  
Scanning Electron

Low-voltage scanning electron microscopy (LV-SEM) enables us to directly examine non-conducting materials with high spatial resolution. Although use of ultra-low-energy electrons can provide further advantages for characterizing delicate samples, lens aberrations rapidly deteriorates the image resolution. The combined use of a retarding field and the probe-forming lens system can improve the image resolution for electrons with very low energies. In commercially available FEG-SEMs, the retarding field can simply be constructed by applying a negative potential to the specimen. Interesting contrast variations have been observed in ultra-low-voltage SEM images. In this short communication, we discuss the application of LV-SEM to examining semiconductor devices and also the recent development of the ultra-low-voltage SEM technique.

Pathogenesis of Human Hair Defects

1974 ◽  
Vol 32 ◽  
pp. 12-13
Author(s):  
P.S. Porter ◽  
T. Aoyagi ◽  
R. Matta
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Human Hair ◽  
Standard Techniques ◽  
Scanning Electron

Using standard techniques of scanning electron microscopy (SEM), over 1000 human hair defects have been studied. In several of the defects, the pathogenesis of the abnormality has been clarified using these techniques. It is the purpose of this paper to present several distinct morphologic abnormalities of hair and to discuss their pathogenesis as elucidated through techniques of scanning electron microscopy.

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