LOW-VOLTAGE AND ULTRA-LOW-VOLTAGE SCANNING ELECTRON MICROSCOPY OF SEMICONDUCTOR SURFACES AND DEVICES

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4387-4394 ◽  
Author(s):  
JINGYUE LIU
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Voltage ◽  
Image Resolution ◽  
Sem Images ◽  
Conducting Materials ◽  
Low Energies ◽  
Low Energy Electrons ◽  
Voltage Scanning ◽  
Scanning Electron

Low-voltage scanning electron microscopy (LV-SEM) enables us to directly examine non-conducting materials with high spatial resolution. Although use of ultra-low-energy electrons can provide further advantages for characterizing delicate samples, lens aberrations rapidly deteriorates the image resolution. The combined use of a retarding field and the probe-forming lens system can improve the image resolution for electrons with very low energies. In commercially available FEG-SEMs, the retarding field can simply be constructed by applying a negative potential to the specimen. Interesting contrast variations have been observed in ultra-low-voltage SEM images. In this short communication, we discuss the application of LV-SEM to examining semiconductor devices and also the recent development of the ultra-low-voltage SEM technique.

Low-Voltage Scanning Electron Microscopy Investigation of Polymers

1988 ◽  
Vol 46 ◽  
pp. 220-221
Author(s):  
V. K. Berry
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Voltage ◽  
Morphological Characterization ◽  
Transmission Electron ◽  
Conducting Materials ◽  
Voltage Scanning ◽  
Scanning Electron

The morphological characterization of any polymer blend plays an important part in the development of a new blend system because the properties of blends are dictated by phase morphology which is dependent upon the chemistry and the processing conditions. Light microscopy, scanning electron microscopy and transmission electron microscopy are the most commonly used microscopical techniques for morphological characterization. Transmission electron microscopy techniques provide the best resolution (≈ 0.3 nm) but are limited in the size of sample area and require elaborate sample preparation procedures. Surface charging and beam damage problems have been some of the drawbacks of conventional scanning electron microscopy with non-conducting materials like polymers.The use of low accelerating voltage scanning electron microscopy (LVSEM) in the characterization of polymers and other non-conducting materials is beginning to be recognized.

Low-Voltage Scanning Electron Microscopy in polymer characterization

1987 ◽  
Vol 45 ◽  
pp. 468-469 ◽  
Author(s):  
V. K. Berry
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Voltage ◽  
Polymer Surfaces ◽  
Conducting Materials ◽  
Theoretical Considerations ◽  
Voltage Scanning ◽  
Beam Damage ◽  
Scanning Electron

The application of low voltage scanning electron microscopy (LVSEM) to the characterization of polymers and non-conducting materials, other than semiconductors, has not been well explored yet. Some of the theoretical considerations and practical limitations which prevented the development of commercial instruments have mostly been addressed with the result that machines are now available which are optimized for low voltage (≥ 0.5 kV) operation. The advantages of working at low voltages are beginning to be recognized outside the semi-conductor industry. When we image uncoated polymer surfaces at low beam energies (0.5-1.5 kV), no beam damage or charging artifacts are experienced, because in this region the emitted electrons are equal to or more than the incident electrons and there is no deposition of charge underneath the surface due to the lower penetration of the incident electrons.

scholarly journals False Morphology of Aerogels Caused by Gold Coating for SEM Imaging

Polymers ◽  
2021 ◽  
Vol 13 (4) ◽  
pp. 588
Author(s):  
Laura Juhász ◽  
Krisztián Moldován ◽  
Pavel Gurikov ◽  
Falk Liebner ◽  
István Fábián ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Voltage ◽  
Structural Parameters ◽  
Nitrogen Adsorption ◽  
Sem Images ◽  
Gold Sputtering ◽  
Nanostructured Gold ◽  
Voltage Scanning ◽  
Scanning Electron

The imaging of non-conducting materials by scanning electron microscopy (SEM) is most often performed after depositing few nanometers thick conductive layers on the samples. It is shown in this work, that even a 5 nm thick sputtered gold layer can dramatically alter the morphology and the surface structure of many different types of aerogels. Silica, polyimide, polyamide, calcium-alginate and cellulose aerogels were imaged in their pristine forms and after gold sputtering utilizing low voltage scanning electron microscopy (LVSEM) in order to reduce charging effects. The morphological features seen in the SEM images of the pristine samples are in excellent agreement with the structural parameters of the aerogels measured by nitrogen adsorption-desorption porosimetry. In contrast, the morphologies of the sputter coated samples are significantly distorted and feature nanostructured gold. These findings point out that extra care should be taken in order to ensure that gold sputtering does not cause morphological artifacts. Otherwise, the application of low voltage scanning electron microscopy even yields high resolution images of pristine non-conducting aerogels.

Low-voltage, high-resolution scanning electron microscopy of polymers

1987 ◽  
Vol 45 ◽  
pp. 466-467 ◽  
Author(s):  
S. J. Krause ◽  
W.W. Adams ◽  
S. Kumar ◽  
T. Reilly ◽  
T. Suziki
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Voltage ◽  
Chromatic Aberration ◽  
Image Resolution ◽  
Resolution Limit ◽  
Crossover Point ◽  
New Generation ◽  
Beam Damage ◽  
Scanning Electron

Scanning electron microscopy (SEM) of polymers at routine operating voltages of 15 to 25 keV can lead to beam damage and sample image distortion due to charging. Imaging polymer samples with low accelerating voltages (0.1 to 2.0 keV), at or near the “crossover point”, can reduce beam damage, eliminate charging, and improve contrast of surface detail. However, at low voltage, beam brightness is reduced and image resolution is degraded due to chromatic aberration. A new generation of instruments has improved brightness at low voltages, but a typical SEM with a tungsten hairpin filament will have a resolution limit of about 100nm at 1keV. Recently, a new field emission gun (FEG) SEM, the Hitachi S900, was introduced with a reported resolution of 0.8nm at 30keV and 5nm at 1keV. In this research we are reporting the results of imaging coated and uncoated polymer samples at accelerating voltages between 1keV and 30keV in a tungsten hairpin SEM and in the Hitachi S900 FEG SEM.

Novel Approaches to Low-Voltage Scanning Electron Microscopy

1990 ◽  
Vol 48 (1) ◽  
pp. 366-367
Author(s):  
Arthur V. Jones
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Voltage ◽  
Electron Optics ◽  
Current Interest ◽  
New Concepts ◽  
Opportune Time ◽  
Novel Approaches ◽  
Voltage Scanning ◽  
Scanning Electron

In comparison with the developers of other forms of instrumentation, scanning electron microscope manufacturers are among the most conservative of people. New concepts usually must wait many years before being exploited commercially. The field emission gun, developed by Albert Crewe and his coworkers in 1968 is only now becoming widely available in commercial instruments, while the innovative lens designs of Mulvey are still waiting to be commercially exploited. The associated electronics is still in general based on operating procedures which have changed little since the original microscopes of Oatley and his co-workers.The current interest in low-voltage scanning electron microscopy will, if sub-nanometer resolution is to be obtained in a useable instrument, lead to fundamental changes in the design of the electron optics. Perhaps this is an opportune time to consider other fundamental changes in scanning electron microscopy instrumentation.

scholarly journals Low Voltage Scanning Electron Microscopy

2002 ◽  
Vol 10 (2) ◽  
pp. 22-23 ◽  
Author(s):  
David C Joy ◽  
Dale E Newbury
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Spatial Resolution ◽  
Low Voltage ◽  
Incident Beam ◽  
Operational Mode ◽  
X Ray ◽  
Rapid Fall ◽  
Voltage Scanning ◽  
Scanning Electron

Low Voltage Scanning Electron Microscopy (LVSEM), defined as operation in the energy range below 5 keV, has become perhaps the most important single operational mode of the SEM. This is because the LVSEM offers advantages in the imaging of surfaces, in the observation of poorly conducting and insulating materials, and for high spatial resolution X-ray microanalysis. These benefits all occur because a reduction in the energy Eo of the incident beam leads to a rapid fall in the range R of the electrons since R ∼k.E01.66. The reduction in the penetration of the beam has important consequences.

Low voltage scanning electron microscopy

Micron ◽  
1996 ◽  
Vol 27 (3-4) ◽  
pp. 247-263 ◽  
Author(s):  
David C. Joy ◽  
Carolyn S. Joy
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Voltage ◽  
Voltage Scanning ◽  
Scanning Electron
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