Study of the response to minimum ionising particles of microstrip detectors made with float zone and magnetic Czochralski silicon after neutron irradiation

ABSTRACTWe found that the intrinsic gettering can be effectively realized in oxygen-lean Czochralski silicon grown in a magnetic field as well as in oxygen-free float-zone silicon. The intrinsic gettering has been observed thus far only in oxygen-rich Czochralski silicon and it has been believed to be intimately related to oxygen. We present experimental characteristics of the new intrinsic gettering process, and we propose a model involving outdiffusion and precipitation of silicon interstitials rather than oxygen which is involved in the standard intrinsic gettering.

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Detection and Identification of Potential Impurities Activated by Neutron Irradiation of Czochralski Silicon

Neutron Transmutation Doping in Semiconductors ◽

10.1007/978-1-4684-8249-2_2 ◽

1979 ◽

pp. 11-26 ◽

Cited By ~ 1

Author(s):

Bobbie D. Stone ◽

Donald B. Hines ◽

Steve L. Gunn ◽

David McKown

Keyword(s):

Neutron Irradiation ◽

Czochralski Silicon ◽

Detection And Identification

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The effect of an electrical field on the radiation tolerance of float zone and magnetic Czochralski silicon particle detectors

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2011.02.033 ◽

2011 ◽

Vol 637 (1) ◽

pp. 95-99 ◽

Cited By ~ 1

Author(s):

S. Väyrynen ◽

J. Härkönen ◽

E. Tuominen ◽

I. Kassamakov ◽

E. Tuovinen ◽

...

Keyword(s):

Silicon Particle ◽

Radiation Tolerance ◽

Electrical Field ◽

Particle Detectors ◽

Czochralski Silicon ◽

Float Zone

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Rapid Thermal Annealing of Neutron Transmutation Toped Czochralski Silicon

MRS Proceedings ◽

10.1557/proc-262-731 ◽

1992 ◽

Vol 262 ◽

Author(s):

G. M. Berezina ◽

F. P. Kdrshunov ◽

N. A. Sobolev ◽

A. V. Voevodova ◽

A. A. Stuk

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Neutron Irradiation ◽

Irradiation Temperature ◽

Electrical Parameters ◽

Furnace Annealing ◽

Annealing Behaviour ◽

Czochralski Silicon ◽

Neutron Transmutation

ABSTRACTThe influence of the rapid thermal annealing (RTA) in comparison with that of the standard furnace annealing (FA) on the electrical parameters and photoluminescence (PL) of Czochralski silicon (Cz Si) subjected to neutron irradiation at various temperatures has been studied. The role of the irradiation temperature on the annealing behaviour of electrical parameters in Cz Si has been established. The possibility of getting neutron transmutation doped (NTD) Cz Si having the calculated resistivity by means of the RTA is shown.

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