Neutron Transmutation Doping in Semiconductors
Latest Publications

TOTAL DOCUMENTS

29

(FIVE YEARS 0)

H-INDEX

4

(FIVE YEARS 0)

Published By Springer US

9781468482515, 9781468482492

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Isochronal Annealing of Resistivity in Float Zone and Czochralski NTD Silicon

Neutron Transmutation Doping in Semiconductors ◽

10.1007/978-1-4684-8249-2_22 ◽

1979 ◽

pp. 291-305 ◽

Cited By ~ 1

Author(s):

Paul J. Glairon ◽

J. M. Meese

Keyword(s):

Isochronal Annealing ◽

Float Zone

Download Full-text

Detection and Identification of Potential Impurities Activated by Neutron Irradiation of Czochralski Silicon

Neutron Transmutation Doping in Semiconductors ◽

10.1007/978-1-4684-8249-2_2 ◽

1979 ◽

pp. 11-26 ◽

Cited By ~ 1

Author(s):

Bobbie D. Stone ◽

Donald B. Hines ◽

Steve L. Gunn ◽

David McKown

Keyword(s):

Neutron Irradiation ◽

Czochralski Silicon ◽

Detection And Identification

Download Full-text

Atomic Displacement Effects in Neutron Transmutation Doping

Neutron Transmutation Doping in Semiconductors ◽

10.1007/978-1-4684-8249-2_18 ◽

1979 ◽

pp. 229-248 ◽

Cited By ~ 14

Author(s):

H. J. Stein

Keyword(s):

Atomic Displacement ◽

Neutron Transmutation Doping ◽

Transmutation Doping ◽

Neutron Transmutation ◽

Displacement Effects

Download Full-text

A Computer Controlled Irradiation System for the University of Missouri Research Reactor

Neutron Transmutation Doping in Semiconductors ◽

10.1007/978-1-4684-8249-2_17 ◽

1979 ◽

pp. 215-228 ◽

Cited By ~ 1

Author(s):

R. Berliner ◽

S. Wood

Keyword(s):

Research Reactor ◽

University Of Missouri ◽

Irradiation System ◽

Computer Controlled ◽

The University

Download Full-text

Silicon Irradiation Facilities at the NBS Reactor

Neutron Transmutation Doping in Semiconductors ◽

10.1007/978-1-4684-8249-2_13 ◽

1979 ◽

pp. 165-170 ◽

Cited By ~ 1

Author(s):

N. A. Bickford ◽

R. F. Fleming

Keyword(s):

Irradiation Facilities

Download Full-text

Transistor Gain Trimming in I2L Integrated Circuits Using the NTD Process

Neutron Transmutation Doping in Semiconductors ◽

10.1007/978-1-4684-8249-2_10 ◽

1979 ◽

pp. 129-141

Author(s):

E. J. Caine ◽

P. J. Glairon ◽

E. J. Charlson ◽

E. M. Charlson

Keyword(s):

Integrated Circuits

Download Full-text

The NTD Process—A New Reactor Technology

Neutron Transmutation Doping in Semiconductors ◽

10.1007/978-1-4684-8249-2_1 ◽

1979 ◽

pp. 1-10 ◽

Cited By ~ 3

Author(s):

J. M. Meese

Keyword(s):

Reactor Technology

Download Full-text

Determination of the Neutron Flux and Energy Spectrum and Calculation of Primary Recoil and Damage-Energy Distributions for Materials Irradiated in the Low Temperature Fast-Neutron Facility in CP-5

Neutron Transmutation Doping in Semiconductors ◽

10.1007/978-1-4684-8249-2_11 ◽

1979 ◽

pp. 143-155 ◽

Cited By ~ 2

Author(s):

M. A. Kirk ◽

L. R. Greenwood

Keyword(s):

Energy Spectrum ◽

Low Temperature ◽

Neutron Flux ◽

Fast Neutron ◽

Energy Distributions ◽

Neutron Facility

Download Full-text

The Advantages of NTD Silicon for High Power Semiconductor Devices

Neutron Transmutation Doping in Semiconductors ◽

10.1007/978-1-4684-8249-2_5 ◽

1979 ◽

pp. 47-52

Author(s):

Roger W. Phillips

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

Download Full-text

Application of NTD Silicon for Power Devices

Neutron Transmutation Doping in Semiconductors ◽

10.1007/978-1-4684-8249-2_4 ◽

1979 ◽

pp. 37-45 ◽

Cited By ~ 3

Author(s):

Hans Mork Janus

Keyword(s):

Power Devices

Download Full-text