Magnetic non-collinear neutron wave resonator

This work illustrates the analysis of Film Bulk Acoustic Resonators (FBAR) using 3D Finite Element (FEM) simulations with the software OnScale in order to predict and improve resonator performance and quality before manufacturing. This kind of analysis minimizes manufacturing cycles by reducing design time with 3D simulations running on High-Performance Computing (HPC) cloud services. It also enables the identification of manufacturing effects on device performance. The simulation results are compared and validated with a manufactured FBAR device, previously reported, to further highlight the usefulness and advantages of the 3D simulations-based design process. In the 3D simulation results, some analysis challenges, like boundary condition definitions, mesh tuning, loss source tracing, and device quality estimations, were studied. Hence, it is possible to highlight that modern FEM solvers, like OnScale enable unprecedented FBAR analysis and design optimization.

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Research on Lamb wave resonator and its applications

2020 IEEE 3rd International Conference on Automation, Electronics and Electrical Engineering (AUTEEE) ◽

10.1109/auteee50969.2020.9315594 ◽

2020 ◽

Author(s):

Leyi Wang

Keyword(s):

Lamb Wave ◽

Wave Resonator

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Dual functionality metamaterial enables ultra-compact, highly sensitive uncooled infrared sensor

Nanophotonics ◽

10.1515/nanoph-2020-0607 ◽

2021 ◽

Vol 10 (4) ◽

pp. 1337-1346

Author(s):

Jin Tao ◽

Zhongzhu Liang ◽

Guang Zeng ◽

Dejia Meng ◽

David R. Smith ◽

...

Keyword(s):

High Sensitivity ◽

Metamaterial Absorber ◽

Bulk Acoustic Wave ◽

Infrared Sensors ◽

Bulk Acoustic Wave Resonator ◽

Wave Resonator ◽

Highly Sensitive ◽

Film Bulk ◽

Perfect Metamaterial Absorber ◽

High Absorption

Abstract Cointegration and coupling a perfect metamaterial absorber (PMA) together with a film bulk acoustic wave resonator (FBAR) in a monolithic fashion is introduced for the purpose of producing ultracompact uncooled infrared sensors of high sensitivity. An optimized ultrathin multilayer stack was implemented to realize the proposed device. It is experimentally demonstrated that the resonance frequency of the FBAR can be used efficiently as a sensor output as it downshifts linearly with the intensity of the incident infrared irradiation. The resulting sensor also achieves a high absorption of 88% for an infrared spectrum centered at a wavelength of 8.2 μm. The structure is compact and can be easily integrated on a CMOS-compatible chip since both the FBAR and PMA utilize and share the same stack of metal and dielectric layers.

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