Spatial anisotropy of linear electro-optic effect in crystal materials: II. Indicative surfaces as efficient tool for electro-optic coupling optimization in LiNbO3

2009 ◽  
Vol 47 (1) ◽  
pp. 24-30 ◽  
Author(s):  
A.S. Andrushchak ◽  
B.G. Mytsyk ◽  
N.M. Demyanyshyn ◽  
M.V. Kaidan ◽  
O.V. Yurkevych ◽  
...  
Keyword(s):  
Efficient Tool ◽  
Spatial Anisotropy ◽  
Electro Optic

3D-analysis of spatial anisotropy for linear electro-optic effect in crystal materials: Geometry determination of the most efficient electro-optic coupling

2008 ◽  
Author(s):  
Anatoliy Andrushchak ◽  
Bohdan Mytsyk ◽  
Natalya Demyanyshyn ◽  
Andriy Lavinskyy ◽  
Oleg Yurkevych ◽  
...  
Keyword(s):  
3D Analysis ◽  
Spatial Anisotropy ◽  
Electro Optic

Spatial anisotropy of the linear electro-optic effect in lithium niobate crystals: Analytical calculations and their experimental verification

2015 ◽  
Vol 45 ◽  
pp. 42-46 ◽  
Author(s):  
A.S. Andrushchak ◽  
O.V. Yurkevych ◽  
О.А. Buryy ◽  
V.S. Andrushchak ◽  
R.S. Kolodiy ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Experimental Verification ◽  
Spatial Anisotropy ◽  
Electro Optic ◽  
Lithium Niobate Crystals

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

Temperature Measurement in Laminar Free Convection Using Electro-Optic Holography

1997 ◽  
Vol 7 (9) ◽  
pp. 1893-1898 ◽  
Author(s):  
G. Schirripa Spagnolo ◽  
D. Ambrosini ◽  
A. Ponticiello ◽  
D. Paoletti
Keyword(s):  
Free Convection ◽  
Temperature Measurement ◽  
Electro Optic

Detection of Terahertz Pulsed Radiation by using Heterodyne Electro-Optic Sampling Scheme

2012 ◽  
Vol 132 (9) ◽  
pp. 727-733
Author(s):  
Masahiko Tani ◽  
Michael I. Bakunov ◽  
Kohji Yamamoto ◽  
Kazuki Horita ◽  
Tetsuya Kinoshita ◽  
...  
Keyword(s):  
Sampling Scheme ◽  
Electro Optic

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

Sign in / Sign up

Export Citation Format

Share Document