A novel optical fiber co-doped with Ag nanoparticles and Tm -ions was developed for S -band emission. Enhanced emission around 1470 nm was obtained upon pumping at 633 nm by the He - Ne laser.
Electronic and optical properties of Germanium-doped (Ge-doped) silica optical fiber are investigated by employing first-principle methods. The substitution of a Ge atom with a Silicon (Si) atom or an Oxygen (O) atom in different “Si–O–Si” membered rings is analyzed. Compared with the experimental data observed at around 5 eV, our calculated results reveal that the characteristic absorption peak at 5.12 eV may be caused by Si–Ge–Si defect in 5-membered ring (5MR). Our study of Ge-doped approach in different ring structures will be useful in the application of Ge-doped optical fiber sensing.
Electronic and luminescence characteristics of Bi/Al co-doped silica optical fiber model were investigated by using first-principle methods. Our results show that the preference Al substitution site is the adjacent Si site rather than O site. The doping of Al can contribute to the dispersion of Bi[Formula: see text] luminescence center and generate new luminescence center at [Formula: see text]1100 nm by affecting [Formula: see text] orbital of the O atom near Bi atom. Our results give a possible explanation of the near-infrared (NIR) luminescence in Bi/Al co-doped silica optical fibers.
Measurements of the magneto-optical properties of PbS-doped silica optical fiber
