Dependence of general Einstein relation on density of state for organic semiconductors

2016 ◽  
Vol 35 ◽  
pp. 65-73 ◽  
Author(s):  
Shi Xiao-Hong ◽  
Sun Jiu-Xun ◽  
Xiong Chun-Hua
2006 ◽  
Vol 83 (2) ◽  
pp. 305-311 ◽  
Author(s):  
Y.-Q. Peng ◽  
J.-H. Yang ◽  
F.-P. Lu

2009 ◽  
Vol 106 (1) ◽  
pp. 013714 ◽  
Author(s):  
Ling Li ◽  
Gregor Meller ◽  
Hans Kosina

2011 ◽  
Vol 107 (6) ◽  
Author(s):  
G. A. H. Wetzelaer ◽  
L. J. A. Koster ◽  
P. W. M. Blom

2006 ◽  
Vol 86 (2) ◽  
pp. 225-229 ◽  
Author(s):  
Y.-Q. Peng ◽  
J.-H. Yang ◽  
F.-P. Lu ◽  
Q.-S. Yang ◽  
H.-W. Xing ◽  
...  

2015 ◽  
Vol 118 (12) ◽  
pp. 125501 ◽  
Author(s):  
Yi Wei ◽  
Xu Zhou ◽  
Yingquan Peng ◽  
Ying Tang ◽  
Ying Wang ◽  
...  

2017 ◽  
Vol 4 (4) ◽  
pp. 608-618 ◽  
Author(s):  
Chuan Liu ◽  
Kairong Huang ◽  
Won-Tae Park ◽  
Minmin Li ◽  
Tengzhou Yang ◽  
...  

The generalized Einstein relation (GER) can unify various theoretical models and predict charge transport in OSCs with various crystallinities, by altering the variance of the density of states and the delocalization degree in a Gaussian-distributed density of states.


RSC Advances ◽  
2015 ◽  
Vol 5 (5) ◽  
pp. 3113-3121 ◽  
Author(s):  
Muhammad Ammar Khan ◽  
Sun Jiu-Xun ◽  
Jin Ke ◽  
Cai Ling-Cang ◽  
Wu Qiang

A transport model with double Gaussian density of state (DOS) for organic semiconductors is proposed, with one Gaussian DOS for free carriers and one for trapped carriers.


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