organic diodes
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2021 ◽  
pp. 106399
Author(s):  
Ragul S ◽  
Rajdeep Dhar ◽  
Soumya Dutta ◽  
Debdutta Ray

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Andreas Petritz ◽  
Esther Karner-Petritz ◽  
Takafumi Uemura ◽  
Philipp Schäffner ◽  
Teppei Araki ◽  
...  

AbstractEnergy autonomy and conformability are essential elements in the next generation of wearable and flexible electronics for healthcare, robotics and cyber-physical systems. This study presents ferroelectric polymer transducers and organic diodes for imperceptible sensing and energy harvesting systems, which are integrated on ultrathin (1-µm) substrates, thus imparting them with excellent flexibility. Simulations show that the sensitivity of ultraflexible ferroelectric polymer transducers is strongly enhanced by using an ultrathin substrate, which allows the mounting on 3D-shaped objects and the stacking in multiple layers. Indeed, ultraflexible ferroelectric polymer transducers have improved sensitivity to strain and pressure, fast response and excellent mechanical stability, thus forming imperceptible wireless e-health patches for precise pulse and blood pressure monitoring. For harvesting biomechanical energy, the transducers are combined with rectifiers based on ultraflexible organic diodes thus comprising an imperceptible, 2.5-µm thin, energy harvesting device with an excellent peak power density of 3 mW·cm−3.


2021 ◽  
Vol 9 (14) ◽  
pp. 4903-4909
Author(s):  
Durgesh C. Tripathi ◽  
K. Sudheendra Rao ◽  
Y. N. Mohapatra

The capacitance rise in low frequency C–V curves originates due to diffusive storage of injected carriers within the bulk in the case of intrinsic devices, whereas a voltage dependent depletion width is the cause in the case of devices having traps.


2020 ◽  
Author(s):  
Andreas Petritz ◽  
Esther Karner-Petritz ◽  
T. Uemura ◽  
Philipp Schäffner ◽  
Teppei Araki ◽  
...  

Abstract Energy autonomy and conformability are essential elements in the next generation of wearable and flexible electronics for healthcare, robotics and cyber-physical systems. This study presents ferroelectric polymer transducers and organic diodes for imperceptible sensing and energy harvesting systems, which, for the first time, are integrated on ultrathin (1-µm) substrates, thus imparting them with unprecedented flexibility. Simulations show that the sensitivity of ultraflexible ferroelectric polymer transducers (UFPTs) is enhanced dramatically using an ultrathin substrate, which allows the mounting on 3D-shaped objects and the stacking in multiple layers. Indeed, UFPTs have superior sensitivity to strain and pressure, fast response and excellent mechanical stability, thus forming imperceptible wireless e-health patches for precise pulse and blood pressure monitoring. For harvesting biomechanical energy, UFPTs are combined with rectifiers based on the world’s first ultraflexible organic diodes thus comprising an imperceptible, 2.5 µm thin, energy harvesting device with an excellent peak power density of 3 mW⋅cm− 3.


2020 ◽  
Vol 320 ◽  
pp. 128392
Author(s):  
Govindasamy Madhaiyan ◽  
Ting-Wei Tung ◽  
Hsiao-Wen Zan ◽  
Hsin-Fei Meng ◽  
Chia-Jung Lu ◽  
...  

2020 ◽  
Vol 1159 ◽  
pp. 112-123
Author(s):  
Pallab Kumar Das ◽  
Swapan Bhunia ◽  
Nabin Baran Manik

The series resistance (Rs) controls the device performance significantly and for organic diode, the typical value of Rs is quite high. There are not many reports on the investigation of the high value of resistance in organic diodes. In this paper, we report that the trapping of charge carriers which is an important parameter to control the charge transport mechanism in organic solids is responsible for this high value of series resistance. In this paper effect of trap energy on Rs has been studied in the presence of TiO2 and ZnO nanoparticles on Phenosafranine (PSF) dye-based organic diode. It is already reported that by incorporating nanoparticles, trap energy is reduced which in turn increases the conductivity and efficiency of the device. So it is expected that trap energy has a strong influence on Rs. In this work we have measured Rs by using the Cheung Cheung method and the trap energy is also measured by analyzing the dc current. The value of Rs is related to trap energy. The extracted values of Rs are about 250.8 KΩ, 108.0 KΩ, and 98.4 KΩ respectively for only PSF, PSF+ZnO, and PSF+TiO2. It is also been observed that by incorporating nanoparticles the trap energy is reduced. The estimated values of the trap energy are about 0.090eV, 0.078eV ,0.072eV respectively for only PSF, PSF+ZnO, and PSF+TiO2. It has been observed that lowering of trap energy by incorporating TiO2 and ZnO reduces the value of Rs.


Molecules ◽  
2020 ◽  
Vol 25 (16) ◽  
pp. 3687
Author(s):  
Leon Hamui ◽  
María Elena Sánchez-Vergara ◽  
N. Díaz-Ortega ◽  
Roberto Salcedo

In the current work, flexible diodes with flat heterojunction and dispersed heterojunction architecture were manufactured with to study the behavior of thin films of disodium phthalocyanine (Na2Pc). The thin film devices, using the electronic acceptor tetracyano-π-quinodimethane (TCNQ), were fabricated by high-vacuum thermal evaporation with annealing post-treatment in order to optimize their behavior. Theoretical calculations based on density functional theory (DFT) with dispersion force analysis were carried out in order to simulate molecular interactions and to establish the nature of the weak interactions between the Na2Pc and TCNQ fragments. In the optimized structure of the coupled Na2Pc-TCNQ, the electronic relationship between phthalocyanine and TCNQ was observed to be through hydrogen bonds with bond lengths of 2.94 and 3.13 Å. Dispersed heterojunction device current density values were considerably larger than those of the flat heterojunction device. Barrier heights of 1.024 and 0.909 eV and charge mobilities of 10−10 and 10−9 m2/Vs for the flat heterojunction device and the dispersed heterojunction device, respectively, were observed. A small effect was observed on the electrical properties by thermal annealing on the flat heterojunction device. The threshold voltage decreased from 1.203 to 1.147 V and φb decreased by 0.001 eV.


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