Impact of ferromagnetic electrode length and thickness on Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSD)

2022 ◽  
pp. 106429
Author(s):  
Marzieh Savadkoohi ◽  
Christopher D'Angelo ◽  
Andrew Grizzle ◽  
Bishnu Dahal ◽  
Pawan Tyagi
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spintronic Devices ◽  
Ferromagnetic Electrode ◽  
Electrode Length

scholarly journals Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technology

2021 ◽  
Vol 57 (6) ◽  
pp. 264-266
Author(s):  
Rui Ma ◽  
Ahmed Sidi El Valli ◽  
Martin Kreißig ◽  
Gregory Di Pendina ◽  
Florian Protze ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Spintronic Devices

scholarly journals Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1342 ◽  
Author(s):  
Zongbin Chen ◽  
Tingzhou Li ◽  
Tie Yang ◽  
Heju Xu ◽  
Rabah Khenata ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Density Functional ◽  
Magnetic Tunnel Junction ◽  
Linear Type ◽  
Ultra Low Power ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Potential Applications ◽  
Spin Filtering

Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized R 3 − c -type bulk PdF3 compound, which has potential applications in ultra-fast and ultra-low power spintronic devices. The effects of spin-orbit coupling and on-site Coulomb interaction were determined for the bulk material in this study. To explore the potential applications in spintronic devices, we also performed first-principles combined with the non-equilibrium Green’s function for the PdF3/Ga2O3/PdF3 magnetic tunnel junction (MTJ). The results suggested that this MTJ exhibits perfect spin filtering and high tunnel magnetoresistance (~5.04 × 107).

scholarly journals Development and Research of a Theoretical Model of the Magnetic Tunnel Junction

Sensors ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 2118
Author(s):  
Oleg Polyakov ◽  
Vladimir Amelichev ◽  
Dmitry Zhukov ◽  
Dmitry Vasilyev ◽  
Sergey Kasatkin ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Theoretical Model ◽  
Tunnel Junction ◽  
Coupling Coefficient ◽  
Magnetic Tunnel Junction ◽  
Inhomogeneous Magnetic Field ◽  
Spintronic Devices ◽  
Ferromagnetic Layers ◽  
Magnetostatic Coupling

Spin-dependent tunneling structures are widely used in many spintronic devices and sensors. This paper describes the magnetic tunnel junction (MTJ) characteristics caused by the inhomogeneous magnetic field of ferromagnetic layers. The extremely oblate magnetic ellipsoids have been used to mimic these layers. The strong effect of an inhomogeneous magnetic field on the magnetoresistive layers’ interaction was demonstrated. The magnetostatic coupling coefficient is also calculated.

Normalization and correction factors for magnetic tunnel junction sensor performances comparison

2021 ◽  
pp. 1-1
Author(s):  
E. Monteblanco ◽  
A. Solignac ◽  
C. Chopin ◽  
J. Moulin ◽  
P. Belliot ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Correction Factors

scholarly journals Nanoscale domain wall devices with magnetic tunnel junction read and write

2021 ◽  
Vol 4 (6) ◽  
pp. 392-398 ◽  
Author(s):  
E. Raymenants ◽  
O. Bultynck ◽  
D. Wan ◽  
T. Devolder ◽  
K. Garello ◽  
...  
Keyword(s):  
Domain Wall ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Domain Wall Devices

scholarly journals A Dual Magnetic Tunnel Junction‐Based Neuromorphic Device

2020 ◽  
Vol 2 (12) ◽  
pp. 2070120
Author(s):  
Jeongmin Hong ◽  
Xin Li ◽  
Nuo Xu ◽  
Hong Chen ◽  
Stefano Cabrini ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction

scholarly journals Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

2021 ◽  
Vol 118 (11) ◽  
pp. 112401
Author(s):  
Mahshid Alamdar ◽  
Thomas Leonard ◽  
Can Cui ◽  
Bishweshwor P. Rimal ◽  
Lin Xue ◽  
...  
Keyword(s):  
Domain Wall ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Orbit

A domain wall-magnetic tunnel junction artificial synapse with notched geometry for accurate and efficient training of deep neural networks

2021 ◽  
Vol 118 (20) ◽  
pp. 202405
Author(s):  
Samuel Liu ◽  
T. Patrick Xiao ◽  
Can Cui ◽  
Jean Anne C. Incorvia ◽  
Christopher H. Bennett ◽  
...  
Keyword(s):  
Neural Networks ◽  
Domain Wall ◽  
Tunnel Junction ◽  
Deep Neural Networks ◽  
Magnetic Tunnel Junction ◽  
Artificial Synapse
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