scholarly journals Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1342 ◽  
Author(s):  
Zongbin Chen ◽  
Tingzhou Li ◽  
Tie Yang ◽  
Heju Xu ◽  
Rabah Khenata ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Density Functional ◽  
Magnetic Tunnel Junction ◽  
Linear Type ◽  
Ultra Low Power ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Potential Applications ◽  
Spin Filtering

Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized R 3 − c -type bulk PdF3 compound, which has potential applications in ultra-fast and ultra-low power spintronic devices. The effects of spin-orbit coupling and on-site Coulomb interaction were determined for the bulk material in this study. To explore the potential applications in spintronic devices, we also performed first-principles combined with the non-equilibrium Green’s function for the PdF3/Ga2O3/PdF3 magnetic tunnel junction (MTJ). The results suggested that this MTJ exhibits perfect spin filtering and high tunnel magnetoresistance (~5.04 × 107).

scholarly journals CrO2-based heterostructure and magnetic tunnel junction: perfect spin filtering effect, spin diode effect and high tunnel magnetoresistance

RSC Advances ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 3550-3557 ◽  
Author(s):  
Jiangchao Han ◽  
Jimei Shen ◽  
Guoying Gao
Keyword(s):  
Density Of States ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
Filtering Effect ◽  
Spin Diode ◽  
Spin Filtering

Spin-dependent device density of states in the CrO2/TiO2/CrO2 magnetic tunnel junction.

High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

2017 ◽  
Vol 53 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Jiaqi Zhou ◽  
Weisheng Zhao ◽  
Shouzhong Peng ◽  
Junfeng Qiao ◽  
Jacques-Olivier Klein ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
First Principles ◽  
Magnetic Tunnel Junction ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
First Principles Study

Understanding the effect of vacancy defects on spin transport in CrO2–graphene–CrO2 magnetic tunnel junction

2016 ◽  
Vol 30 (09) ◽  
pp. 1650102
Author(s):  
Sudhanshu Choudhary ◽  
Divya Kaushik
Keyword(s):  
Tunnel Junction ◽  
Spin Transport ◽  
Magnetic Tunnel Junction ◽  
Graphene Sheets ◽  
Half Metallic ◽  
High Tunnel ◽  
Vacancy Defects ◽  
Tunnel Magnetoresistance ◽  
Metallic Ferromagnet

In this paper, we investigate the effect of vacancy defects on spin transport in graphene-based magnetic tunnel junction (MTJ). An increase in conductance was seen in vacancy-defected MTJ structure which is in contrast to the results reported in past where a decrease in conductance with vacancy was observed for graphene sheets. This increase in conductance may be due to the use of CrO2 half-metallic ferromagnet (HMF) electrodes instead of metallic or ferromagnet (FM) electrodes. Furthermore, high tunnel magnetoresistance (TMR) [Formula: see text]99% and perfect spin filtration was obtained for both vacancy-defected and no-defect (pristine) MTJ structures. The TMR in vacancy-defected structure is seen to decrease by 6.2% and by 13% at bias voltages of 1.2[Formula: see text]V and 1.4[Formula: see text]V, when compared to TMR in no-defect MTJ structure.

scholarly journals Bolometric Properties of a Spin-Torque Diode Based on a Magnetic Tunnel Junction

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
G. D. Demin ◽  
K. A. Zvezdin ◽  
A. F. Popkov
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Nonuniform Heating ◽  
Spin Torque ◽  
Rectification Effect ◽  
Wide Range ◽  
Spin Polarized ◽  
Potential Applications ◽  
Dynamic Components ◽  
Bolometric Effect

Spin caloritronics opens up a wide range of potential applications, one of which can be the thermoelectric rectification of a microwave signal by spin-diode structures. The bolometric properties of a spin-torque diode based on a magnetic tunnel junction (MTJ) in the presence of a thermal gradient through a tunnel junction are discussed. Theoretical estimates of the static and dynamic components of the microwave sensitivity of the spin-torque diode, related to thermoelectric tunnel magneto-Seebeck effect and the thermal transfer of spin angular momentum in the MTJ under nonuniform heating, are presented. Despite the fact that the thermal contribution to the microwave sensitivity of the spin-torque diode is found to be relatively small in relation to the rectification effect related to the modulation of the MTJ resistance by a microwave spin-polarized current, nevertheless, the considered bolometric effect can be successfully utilized in some real-world microwave applications.

VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY IN SPINTRONIC DEVICES

SPIN ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1240002 ◽  
Author(s):  
PEDRAM KHALILI AMIRI ◽  
KANG L. WANG
Keyword(s):  
Magnetic Anisotropy ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Magnetic Films ◽  
Magnetization Dynamics ◽  
Spintronic Devices ◽  
Magnetic Random Access Memory ◽  
Thin Magnetic Films ◽  
Potential Applications ◽  
New Generation

Electric-field-control of magnetism can dramatically improve the energy efficiency of spintronic devices and enhance the performance of magnetic memories. More generally, it expands the range of applications of nonvolatile spintronic devices, by making them energetically competitive compared to conventional semiconductor solutions for logic and computation, thereby potentially enabling a new generation of ultralow-power nonvolatile spintronic systems. This paper reviews recent experiments on the voltage-controlled magnetic anisotropy (VCMA) effect in thin magnetic films, and their device implications. The interfacial perpendicular anisotropy in layered magnetic material stacks, as well as its modulation by voltage, are discussed. Ferromagnetic resonance experiments and VCMA-induced high-frequency magnetization dynamics are reviewed. Finally, we discuss recent progress on voltage-induced switching of magnetic tunnel junction devices and its potential applications to magnetic random access memory (MRAM).

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