An application of gold diffusion for defect investigation in silicon

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4681-4684 ◽  
Author(s):  
O.V. Feklisova ◽  
E.B. Yakimov
2013 ◽  
Vol 1 ◽  
pp. 866-872 ◽  
Author(s):  
J.A. Tsanakas ◽  
M. Karoglou ◽  
E.T. Delegou ◽  
P.N. Botsaris ◽  
A. Bakolas ◽  
...  

1971 ◽  
Vol 5 (3) ◽  
pp. K213-K215
Author(s):  
F. A. Huntley ◽  
A. F. W. Willoughby

1974 ◽  
Vol 25 (2) ◽  
pp. K133-K136 ◽  
Author(s):  
P. Z. Borukhovich ◽  
A. E. Kiv ◽  
V. I. Kimarskii ◽  
A. I. Koifman ◽  
O. R. Niyazova
Keyword(s):  

2021 ◽  
Vol MA2021-02 (32) ◽  
pp. 951-951
Author(s):  
Qianyu Cheng ◽  
Zeyu Chen ◽  
Hongyu Peng ◽  
Yafei Liu ◽  
Shanshan Hu ◽  
...  

2008 ◽  
Vol 278 ◽  
pp. 1-10 ◽  
Author(s):  
M. Abdel-Rahman ◽  
N.A. Kamel ◽  
Yahia A. Lotfy ◽  
Emad A. Badawi ◽  
M.A. Abdel-Rahman

Positron Annihilation Doppler Broadening Spectroscopy (PADPS) is a nondestructive technique used in materials science. Electrical measurements are one of the oldest techniques also used in materials science. This paper aims to discuss the availability of using both PADPS and electrical measurements as diagnostic techniques to detect defects in a set of plastically deformed 5454 wrought aluminum alloys. The results of the positron annihilation measurements and the electrical measurements were analyzed in terms of the two-state trapping model. This model can be used to investigate both the defect and dislocation densities of the samples under investigation. Results obtained by both nuclear and electrical techniques have been reported.


Author(s):  
M. Garozzo ◽  
A. Parretta ◽  
M. Vittori ◽  
A. Camanzi ◽  
P. Alessandrini

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000343-000348 ◽  
Author(s):  
James J. Wang

More applications need microcontrollers to operate at higher temperatures. ICs must survive faster corrosion rate and higher stresses. Improving wire bonding, mold compound or package design requires engineering effort, long evaluation and cost. Because packages are already optimized, further optimization often does not yield the needed improvements. Without changing either chip design or the packaging, one can achieve high temperature reliability by protecting ICs with a gold, over passivation metal (OPM). Low cost CMOS liquid crystal display driver ICs are plated with gold bumps at high volume. Similar gold plating process can be quickly and cheaply implemented over all microcontrollers. Between ICs to the electroplated gold OPM is a barrier metal that slows gold diffusion into aluminum and thereby increases operating life before Au-Al intermetallic wire bond failure. Reliability is improved 6x to 94x under different test conditions. Ball bonding to gold pads are 10% to 40% stronger than onto aluminum pads. Furthermore, gold-gold mono-metallic bonds are ductile and can withstand stresses of extreme package reliability tests consisting of: AATC, MSL1 preconditioning, autoclave and then 190C HTB for 1000 hours. Ductile bonds can strain under mechanical stress and shock. Gold is resistant against corrosion such that packaged ICs survive reliability tests causing mold compound delamination and then moisture ingress from autoclave.


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