Gas-Phase Fluorination of g-C3N4 for Enhanced Photocatalytic Hydrogen Evolution

Graphitic carbon nitride (g-C3N4) has attracted much attention because of its potential for application in solar energy conservation. However, the photocatalytic activity of g-C3N4 is limited by the rapidly photogenerated carrier recombination and insufficient solar adsorption. Herein, fluorinated g-C3N4 (F-g-CN) nanosheets are synthesized through the reaction with F2/N2 mixed gas directly. The structural characterizations and theoretical calculations reveal that fluorination introduces N vacancy defects, structural distortion and covalent C-F bonds in the interstitial space simultaneously, which lead to mesopore formation, vacancy generation and electronic structure modification. Therefore, the photocatalytic activity of F-g-CN for H2 evolution under visible irradiation is 11.6 times higher than that of pristine g-C3N4 because of the enlarged specific area, enhanced light harvesting and accelerated photogenerated charge separation after fluorination. These results show that direct treatment with F2 gas is a feasible and promising strategy for modulating the texture and configuration of g-C3N4-based semiconductors to drastically enhance the photocatalytic H2 evolution process.

Study on the aerosol generation of plutonium metal due to oxidation

Transuranic metals such as plutonium usually need to be protected in inert gases to inhibit oxidation and produce aerosols. In the paper, the oxidation reaction process of plutonium was depicted based on the point defect model. The aerosol generation rate was approximated to the oxidation rate of plutonium when the oxidation layer keeps constant. The results show that the rate is strongly dependent on the vacancy diffusivity and reaction rate constant of the vacancy generation and consumption. The aerosol generation rate at the temperature of 298 K is in the order of 108 particles/cm2/s.

Molecular Dynamics Simulations of Vacancy Generation and Migration near a Monocrystalline Silicon Surface during Energetic Cluster Ion Implantation

The process of ion implantation often involves vacancy generation and migration. The vacancy generation and migration near a monocrystalline silicon surface during three kinds of energetic Si35 cluster ion implantations were investigated by molecular dynamics simulations in the present work. The patterns of vacancy generation and migration, as well as the implantation-induced amorphous structure, were analyzed according to radial distribution function, Wigner–Seitz cell, and identify diamond structure analytical methods. A lot of vacancies rapidly generate and migrate in primary directions and form an amorphous structure in the first two picoseconds. The cluster with higher incident kinetic energy can induce the generation and migration of more vacancies and a deeper amorphous structure. Moreover, boundaries have a loading–unloading effect, where interstitial atoms load into the boundary, which then acts as a source, emitting interstitial atoms to the target and inducing the generation of vacancies again. These results provide more insight into doping silicon via ion implantation.

Влияние водорода на флуктуационное охрупчивание алюминия

The main processes occurring during vacancy generation in aluminum in the presence of hydrogen are described on the base of ab initio methods using the meta-functional SCAN. It was shown that hydrogen reduces the vacancy generation energy from 2.8 eV to 0.8 eV. In this case, eight hydrogen atoms located in the tetrahedral voids of the lattice around one aluminum atom make it much easier for it to move to the interstitial site. In accordance with the kinetic concept of embrittlement the dependence of the activation energy of hydrogen embrittlement of aluminum is calculated on the concentration of hydrogen and temperature. It is shown that hydrogen reduces the time of aluminum embrittlement only if its concentration in aluminum is more than critical one (~3⋅〖10〗^(-4) at T=293 K).