The high hydrostatic pressure effect on shallow donor binding energies in GaAs–(Ga, Al)As cylindrical quantum well wires at selected temperatures

2011 ◽  
Vol 406 (11) ◽  
pp. 2116-2120 ◽  
Author(s):  
H.D. Karki ◽  
S. Elagoz ◽  
P. Baser
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
High Hydrostatic Pressure ◽  
Pressure Effect ◽  
Shallow Donor ◽  
Binding Energies ◽  
Quantum Well Wires

On the scaling of exciton and impurity binding energies and the virial theorem in semiconductor quantum wells and quantum-well wires

2001 ◽  
Vol 692 ◽  
Author(s):  
M. de Leyva-Dios ◽  
L. E. Oliveira
Keyword(s):  
Wave Function ◽  
Quantum Well ◽  
Quantum Wells ◽  
Virial Theorem ◽  
Dimensional Space ◽  
Shallow Donor ◽  
Binding Energies ◽  
Bohr Radius ◽  
Semiconductor Quantum Wells ◽  
Quantum Well Wires

AbstractWe have used the variational and fractional-dimensional space approaches in a study of the virial theorem value and scaling of the shallow-donor binding energies versus donor Bohr radiusin GaAs-(Ga,Al)As semiconductor quantum wells and quantum-well wires. A comparison is made with previous results with respect to exciton states. In the case the donor ground-state wave function may be approximated by a D-dimensional hydrogenic wave function, the virial theorem value equals 2 and the scaling rule for the donor binding energy versus quantum-sized Bohr radius is hyperbolic, both for quantum wells and wires. In contrast, calculations within the variational scheme show that the scaling of the donor binding energies with quantum-sized Bohr radius is in general nonhyperbolic and that the virial theorem value is nonconstant.

Electronic and shallow donor impurity states in GaAs‐Ga1−xAlxAs quantum‐well wires: Effects of dielectric mismatch

1994 ◽  
Vol 75 (11) ◽  
pp. 7389-7393 ◽  
Author(s):  
Zhen‐Yan Deng ◽  
Ting‐Rong Lai ◽  
Jing‐Kun Guo ◽  
Shi‐Wei Gu
Keyword(s):  
Quantum Well ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Impurity States ◽  
Quantum Well Wires ◽  
Dielectric Mismatch

Binding Energies of Excitons in Square Quantum-Well Wires in the Presence of a Magnetic Field

2004 ◽  
Vol 21 (1) ◽  
pp. 166-169 ◽  
Author(s):  
Zhang Ying-Tao ◽  
Di Bing ◽  
Xie Zun ◽  
Li You-Cheng
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Binding Energies ◽  
Quantum Well Wires

THE EFFECT OF HYDROSTATIC PRESSURE ON METAL–INSULATOR TRANSITION IN QUANTUM WELL SEMICONDUCTOR SYSTEMS II

2005 ◽  
Vol 04 (01) ◽  
pp. 45-53 ◽  
Author(s):  
A. JOHN PETER
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Ionization Energy ◽  
Critical Concentration ◽  
Shallow Donor ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Mass Approximation ◽  
The One

Using a variational procedure within the effective mass approximation, the ionization energies of a shallow donor in a quantum well (QW) of GaAs/Ga 1-x Al x As superlattice system under the influence of pressure with the exact dielectric function are obtained. The vanishing of ionization energy initiating Mott transition is observed within the one-electron approximation. The effects of Anderson localization using a simple model, and exchange and correlation in the Hubbard model are included in this model. It is found that the ionization energy (i) increases when well width increases for a given pressure, (ii) decreases and reaches a bulk value for a larger well width, (iii) increases with increasing external hydrostatic pressure for a given QW thickness, and (iv) the critical concentration at which the metal–insulator transition (MIT) occurs is increased when pressure is applied. It also is demonstrated that MIT is not possible in a hydrostatic pressure in a quantum well supporting scaling theory of localization. All the calculations have been carried out with finite and infinite barriers and the results are compared with available data in the literature.

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