The binding energies of shallow donor impurities in GaAs quantum-well wires under applied electric fields

1997 ◽  
Vol 81 (12) ◽  
pp. 7890-7894 ◽  
Author(s):  
A. Montes ◽  
C. A. Duque ◽  
N. Porras-Montenegro
Keyword(s):  
Quantum Well ◽  
Electric Fields ◽  
Shallow Donor ◽  
Binding Energies ◽  
Quantum Well Wires

On the scaling of exciton and impurity binding energies and the virial theorem in semiconductor quantum wells and quantum-well wires

2001 ◽  
Vol 692 ◽  
Author(s):  
M. de Leyva-Dios ◽  
L. E. Oliveira
Keyword(s):  
Wave Function ◽  
Quantum Well ◽  
Quantum Wells ◽  
Virial Theorem ◽  
Dimensional Space ◽  
Shallow Donor ◽  
Binding Energies ◽  
Bohr Radius ◽  
Semiconductor Quantum Wells ◽  
Quantum Well Wires

AbstractWe have used the variational and fractional-dimensional space approaches in a study of the virial theorem value and scaling of the shallow-donor binding energies versus donor Bohr radiusin GaAs-(Ga,Al)As semiconductor quantum wells and quantum-well wires. A comparison is made with previous results with respect to exciton states. In the case the donor ground-state wave function may be approximated by a D-dimensional hydrogenic wave function, the virial theorem value equals 2 and the scaling rule for the donor binding energy versus quantum-sized Bohr radius is hyperbolic, both for quantum wells and wires. In contrast, calculations within the variational scheme show that the scaling of the donor binding energies with quantum-sized Bohr radius is in general nonhyperbolic and that the virial theorem value is nonconstant.

Electronic and shallow donor impurity states in GaAs‐Ga1−xAlxAs quantum‐well wires: Effects of dielectric mismatch

1994 ◽  
Vol 75 (11) ◽  
pp. 7389-7393 ◽  
Author(s):  
Zhen‐Yan Deng ◽  
Ting‐Rong Lai ◽  
Jing‐Kun Guo ◽  
Shi‐Wei Gu
Keyword(s):  
Quantum Well ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Impurity States ◽  
Quantum Well Wires ◽  
Dielectric Mismatch

Binding Energies of Excitons in Square Quantum-Well Wires in the Presence of a Magnetic Field

2004 ◽  
Vol 21 (1) ◽  
pp. 166-169 ◽  
Author(s):  
Zhang Ying-Tao ◽  
Di Bing ◽  
Xie Zun ◽  
Li You-Cheng
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Binding Energies ◽  
Quantum Well Wires

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

Binding energies and density of impurity states of shallow hydrogenic impurities in cylindrical quantum-well wires

1991 ◽  
Vol 43 (2) ◽  
pp. 1824-1827 ◽  
Author(s):  
N. Porras Montenegro ◽  
J. López-Gondar ◽  
L. E. Oliveira
Keyword(s):  
Quantum Well ◽  
Binding Energies ◽  
Impurity States ◽  
Quantum Well Wires
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