Enhanced electrical properties of Te-enriched ZnTe thin films for buffer layer in solar cell

2021 ◽  
Vol 602 ◽  
pp. 412557
Author(s):  
Waqar Mahmood ◽  
Nazar Abbas Shah
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Znte Thin Films

Influence of Deposition Temperature of ZnTe Films on Silicon by Thermal Evaporation

2013 ◽  
Vol 690-693 ◽  
pp. 569-572
Author(s):  
Jenn Sen Lin ◽  
Shih Syun Wei ◽  
Yi Ting Yu ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Deposition Temperature ◽  
Light Emitting Diodes ◽  
Thermal Evaporation ◽  
Light Emitting ◽  
Znte Thin Films

The microstructure and electrical properties of ZnTe films were investigated by using thermal evaporation with emphasis on the effects of a deposition temperature. Microstructure, crystallinity, carrier concentration, resistivity, and mobility are shown to be dependent on the deposition temperature. The highest carrier concentration of 9.1×1014 cm-3, the lowest resistivity of 9.9 Ω-cm and the largest mobility of 667 cm2V-1S-1 are presented at a deposition temperature of 580oC, respectively. The ZnTe thin films using thermal evaporation can find applications in solar cell or light emitting diodes.

Effect of Annealing Temperature on Electrical Properties of ZnTe Layers Grown by Thermal Evaporation

2012 ◽  
Vol 608-609 ◽  
pp. 1314-1317 ◽  
Author(s):  
Cheng Hsing Hsu ◽  
Ching Fang Tseng ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
Chun Hung Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Light Emitting Diodes ◽  
Thermal Evaporation ◽  
Light Emitting ◽  
Znte Thin Films

The electrical properties of evaporated ZnTe films were investigated with emphasis on the effects of an annealing temperature from 600oC to 800oC by RTA technique. Crystallinity, carrier concentration, sheet resistance, and mobility are shown to be dependent on the annealing temperature. The highest carrier concentration and lowest sheet resistance are 7.9×1015cm-3and 9300 Ω/□ at an annealing temperature of 700oC, respectively. The mobility was found to vary from 20 to 50 cm2V-1S-1. The ZnTe thin films using thermal evaporation can find applications in solar cell or light emitting diodes

Enhanced physicochemical properties of ZnTe thin films as potential buffer layer in solar cell applications

2020 ◽  
Vol 107 ◽  
pp. 106346
Author(s):  
Deepak Suthar ◽  
Himanshu ◽  
S.L. Patel ◽  
S. Chander ◽  
M.D. Kannan ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Physicochemical Properties ◽  
Buffer Layer ◽  
Znte Thin Films

Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi4Ti3O12 thin films on p-Si(100) surfaces

2001 ◽  
Vol 79 (3) ◽  
pp. 403-405 ◽  
Author(s):  
E. Rokuta ◽  
Y. Hotta ◽  
T. Kubota ◽  
H. Tabata ◽  
H. Kobayashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Silicon Oxynitride

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Al-DOPED ZnO TRANSPARENT CONDUCTING OXIDE FOR SOLAR CELL APPLICATIONS

2011 ◽  
Vol 04 (04) ◽  
pp. 401-405 ◽  
Author(s):  
W. CHER ◽  
S. YICK ◽  
S. XU ◽  
Z. J. HAN ◽  
K. OSTRIKOV
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Transparent Conducting Oxide ◽  
Optical Transmittance ◽  
Nitrogen Atmosphere ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Optimal Annealing Temperature ◽  
Post Synthesis

Al -doped zinc oxide (AZO) thin films are deposited onto glass substrates using radio-frequency reactive magnetron sputtering and the improvements in their physical properties by post-synthesis thermal treatment are reported. X-ray diffraction spectra show that the structure of films can be controlled by adjusting the annealing temperatures, with the best crystallinity obtained at 400°C under a nitrogen atmosphere. These films exhibit improved quality and better optical transmittance as indicated by the UV-Vis spectra. Furthermore, the sheet resistivity is found to decrease from 1.87 × 10-3 to 5.63 × 10-4Ω⋅cm and the carrier mobility increases from 6.47 to 13.43 cm2 ⋅ V-1 ⋅ s-1 at the optimal annealing temperature. Our results demonstrate a simple yet effective way in controlling the structural, optical and electrical properties of AZO thin films, which is important for solar cell applications.

Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer

2021 ◽  
Vol 39 (6) ◽  
pp. 063410
Author(s):  
Xiaolong Zhu ◽  
Jianqiang Wu ◽  
Qimin Hu ◽  
Xia Hao ◽  
Wei Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Growth Quality ◽  
Znte Thin Films

scholarly journals Chemical Bath Deposition of Cd1−xZnxS as Buffer Layer in CIGS Solar Cell

2021 ◽  
Author(s):  
Yuming Xue ◽  
Xinyu Wang ◽  
Liming Zhang ◽  
Shipeng Zhang ◽  
Lang Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Buffer Layer ◽  
Chemical Bath Deposition ◽  
Deposition Rate ◽  
Lattice Mismatch ◽  
Solution Concentration ◽  
State Density ◽  
Cubic Phase ◽  
Cigs Solar Cell

Cd1-xZnxS thin films were deposited on glass substrates by chemical bath deposition (CBD). The effect of ZnSO4 solution concentration on the properties of the thin films was analyzed. The concentration of ZnSO4 solution affects the deposition rate of Cd1-xZnxS thin films. When the deposition rate is low, Cd1-xZnxS cubic crystal phase is formed. The surface morphology of hexagonal Cd1-xZnxS thin films is denser than that of cubic phase, the lattice mismatch rate of cubic phase Cd1-xZnxS thin films and CIGS is lower, only 0.56%, the interfacial state density is lower. SCAPS software was used to simulate the performance of the buffer layer, and the conversion efficiency of the cubic phase Cd1-xZnxS buffer layer in CIGS Solar Cell was up to 23.50%. Based on the EDS results, the function relationship between the contents of Zn2+ and Cd2+ in the films and the band gap content was deduced.

Enhancement of the Electrical Properties of GZO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer

2007 ◽  
Vol 51 (5) ◽  
pp. 1732-1735 ◽  
Author(s):  
Yeon-Keon Moon ◽  
Se-Hyun Kim ◽  
Dae-Young Moon ◽  
Woong-Sun Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Tio2 Buffer Layer
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