Enhanced physicochemical properties of ZnTe thin films as potential buffer layer in solar cell applications

Cd1-xZnxS thin films were deposited on glass substrates by chemical bath deposition (CBD). The effect of ZnSO4 solution concentration on the properties of the thin films was analyzed. The concentration of ZnSO4 solution affects the deposition rate of Cd1-xZnxS thin films. When the deposition rate is low, Cd1-xZnxS cubic crystal phase is formed. The surface morphology of hexagonal Cd1-xZnxS thin films is denser than that of cubic phase, the lattice mismatch rate of cubic phase Cd1-xZnxS thin films and CIGS is lower, only 0.56%, the interfacial state density is lower. SCAPS software was used to simulate the performance of the buffer layer, and the conversion efficiency of the cubic phase Cd1-xZnxS buffer layer in CIGS Solar Cell was up to 23.50%. Based on the EDS results, the function relationship between the contents of Zn2+ and Cd2+ in the films and the band gap content was deduced.

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Significant enhancement of photo-physicochemical properties of Yb doped copper oxide thin films for efficient solid-state solar cell

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2019.04.233 ◽

2019 ◽

Vol 795 ◽

pp. 187-196 ◽

Cited By ~ 7

Author(s):

D. Naveena ◽

T. Logu ◽

K. Sethuraman ◽

A. Chandra Bose

Keyword(s):

Thin Films ◽

Solar Cell ◽

Solid State ◽

Physicochemical Properties ◽

Copper Oxide ◽

Significant Enhancement ◽

Oxide Thin Films

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Effects on Structural, Electronic Transport & Optical Properties of Doped & Undoped ZnTe Thin Films for CdTe/CdS Solar Cells

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.510-511.89 ◽

2012 ◽

Vol 510-511 ◽

pp. 89-97

Author(s):

G.H. Tariq ◽

M. Anis-ur-Rehman

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Growth Parameters ◽

Optical Measurements ◽

X Ray Diffraction ◽

Contact Materials ◽

X Ray ◽

Glass Substrates ◽

Evaporation Technique ◽

Znte Thin Films

To overcome the naturally existing Schottky barrier problem between p-CdTe and any metal, an intermediate semiconductor thin buffer layer is a better choice prior to the final metallization for contact. Among many investigated back contact materials the ZnTe is suitable as a buffer layer. ZnTe thin films were deposited onto glass substrates by the thermal evaporation technique under vacuum ~2×10-5mbar. Undoped ZnTe thin films are highly resistive, extrinsic doping of Cu was made to improve the electrical conductivity. Films were doped by immersing in Cu NO32.5H2O solutions for Cu doping. To optimize the growth parameters the prepared films were characterized using various techniques. The structural analysis of these films was performed by X-ray diffraction (XRD) technique and optical transmission. X-ray diffraction identified the phases present in these films and also observed that the prepared films were polycrystalline. Also the spectral dependence of absorption coefficient was determined from spectrophotometer. Energy band gap index were calculated from obtained optical measurements data.

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