Characterization of nanorods in BaNb2O6-doped Er123 films revealed by cross-sectional transmission electron microscopy

2008 ◽  
Vol 468 (15-20) ◽  
pp. 1638-1642 ◽  
Author(s):  
K. Yamada ◽  
A. Ichinose ◽  
S. Horii ◽  
H. Kai ◽  
R. Teranishi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sectional ◽  
Transmission Electron

Nucleation and Growth of {113} Defects and {111} Dislocation Loops Insilicon-Implanted Selicon

1997 ◽  
Vol 469 ◽  
Author(s):  
G. Z. Pan ◽  
K. N. Tu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Microstructural Characterization ◽  
Nucleation And Growth ◽  
Growth Behavior ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTPlan-view and cross-sectional transmission electron microscopy have been used to study the microstructural characterization of the nucleation and growth behavior of {113} rodlike defects, as well as their correlation with {111} dislocation loops in silicon amorphized with 50 keV, 36×1014 Si/cm2, 8.0 mAand annealed by rapid thermal anneals at temperatures from 500 °C to 1100 °C for various times. We found that the nucleations of the {113} rodlike defects and {111} dislocation loops are two separate processes. At the beginning of anneals, excess interstitials accumulate and form circular interstitial clusters at the preamorphous/crystalline interface at as low as 600 °C for 1 s. Then these interstitial clusters grow along the <110> direction to form {113} rodlike defects. Later, while the {113} defects have begun to grow and/or dissolve into matrix, the {111} faulted Frank dislocation loops start to form. We also found that the initial interstitial clusters prefer to grow along the <110>directions inclined to the implantation surface.

Application of Cross-Sectional Transmission Electron Microscopy to the Characterization of Ion-Implanted Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 292-295
Author(s):  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Formation ◽  
Defect Characterization ◽  
Cross Sectional ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Dopant Profile ◽  
The Many

Direct implantation of dopant ions is the most precise method for obtaining a desired dopant profile in a semiconductor substrate. However, in order to achieve satisfactory electrical properties, lattice defects introduced by the energetic dopant ions and by the subsequent annealing process must be confined or eliminated. Because of the many parameters which can be varied during implantation and annealing, it is not generally feasible to survey all conditions. Consequently, the most efficient approach is to understand the mechanisms of defect formation and annealing so that guidelines for choosing a set of implantation/annealing conditions can be determined.Since implantation depths are usually much less than one micron, suitable defect characterization techniques must demonstrate high spatial resolution. Cross-sectional transmission electron microscopy (XTEM) is one such technique. With a resolution (lateral and depth) of ∼0.2nm, the atomic structure of implantation-related defects is accessible.

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