Effect of substrate temperature on the structural, electrical and optical properties of ZnO:Ga thin films prepared by RF magnetron sputtering

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

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Effect of Substrate Temperature on the Opto-Electrical Propertites of Ti Doped ITO Films Deposited by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.602-604.1399 ◽

2012 ◽

Vol 602-604 ◽

pp. 1399-1403

Author(s):

Rui Xin Ma ◽

Shi Na Li ◽

Guo Quan Suo

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Absorption Edge ◽

Blue Shift ◽

Rf Magnetron Sputtering ◽

Electrical And Optical Properties ◽

Glass Substrates ◽

Visible Wavelengths

Ti doped ITO (ITO:Ti) thin films were fabricated on glass substrates by RF magnetron sputtering using only one piece of ITO:Ti ceramic target at different substrate temperature (Ts). The effect of substrate temperature on structural, electrical, and optical properties of the films was investigated. It is confirmed that the resistivity of the films decreases with the increase of Ts till the minimum value of 2.5×10-4 Ω•cm and the transmittance in visible wavelengths is higher than 90%. "Blue shift" and "red shift" of UV absorption edge of the film were observed when Ts200 °CHeaders and footers

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Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.687.70 ◽

2011 ◽

Vol 687 ◽

pp. 70-74

Author(s):

Cheng Hsing Hsu ◽

His Wen Yang ◽

Jenn Sen Lin

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Visible Region ◽

Rf Magnetron Sputtering ◽

Rf Power ◽

Electrical And Optical Properties ◽

Glass Substrates ◽

Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

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