Central barrier width effects on the electron Landé factor in GaAs–Ga0.65Al0.35As double quantum wells

2010 ◽  
Vol 43 (1) ◽  
pp. 521-523 ◽  
Author(s):  
J. Darío Perea ◽  
J.R. Mejía-Salazar ◽  
N. Porras-Montenegro
2006 ◽  
Vol 36 (3b) ◽  
pp. 858-861 ◽  
Author(s):  
E. Reyes-Gómez ◽  
C. A. Perdomo Leiva ◽  
L. E. Oliveira ◽  
M. de Dios-Leyva

1997 ◽  
Vol 11 (05) ◽  
pp. 195-199
Author(s):  
I. C. da Cunha Lima ◽  
L. G. Ferreira Filho ◽  
A. Troper

The RKKY interaction between two magnetic impurities in a GaAs/AlAs double quantum well under a strong electric field perpendicular to the interfaces is obtained as a function of the field strength and the barrier width. We obtain a fast decrease of the exchange with the barrier width for the impurities lying in different wells. At intermediate strengths and small barrier widths, a structure is observed in the inter-well exchange.


1996 ◽  
Vol 166 (7) ◽  
pp. 801-803 ◽  
Author(s):  
L.V. Butov ◽  
A. Zrenner ◽  
M. Hagn ◽  
G. Abstreiter ◽  
G. Boehm ◽  
...  
Keyword(s):  

1999 ◽  
Vol 110 (11) ◽  
pp. 633-638
Author(s):  
Joo In Lee ◽  
Annamratu Kasi Viswanath ◽  
Sungkyu Yu ◽  
Eun-Joo Shin ◽  
Kyu-Seok Lee ◽  
...  

1997 ◽  
Vol 60 (3) ◽  
pp. 345-387 ◽  
Author(s):  
R Ferreira ◽  
G Bastard
Keyword(s):  

1994 ◽  
Vol 49 (8) ◽  
pp. 5434-5437 ◽  
Author(s):  
Shi-rong Jin ◽  
Zhong-ying Xu ◽  
Jin-sheng Luo

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