Improved optoelectronic performance of green light-emitting diodes by employing GaAlInN quantum wells without electron blocking layer

2019 ◽  
Vol 106 ◽  
pp. 68-72 ◽  
Author(s):  
Muhammad Usman ◽  
Urooj Mushtaq ◽  
Kiran Saba ◽  
Dong-Pyo Han ◽  
Nazeer Muhammad ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

Systematical and Numerical Investigations on InGaN-Based Green Light-Emitting Diodes: Si-Doped Quantum Barriers, Engineered p-Electron Blocking Layer and AlGaN/GaN Structured p-Type Region

2020 ◽  
Vol 142 (3) ◽  
Author(s):  
Tie Li ◽  
Guan-Long Cao ◽  
Hong-Juan Xie ◽  
Jing-Qin Wang ◽  
Zi-Hui Zhang
Keyword(s):  
Quantum Wells ◽  
Barrier Height ◽  
Light Emitting Diodes ◽  
Hole Concentration ◽  
Green Light ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Si Doped ◽  
P Type

Abstract Here, we numerically prove that the severe polarization-induced electric field in the active region for [0001]-oriented InGaN-based green light-emitting diodes (LEDs) is reduced when heavily Si-doped GaN quantum barriers are adopted. However, the electron injection is accordingly sacrificed for the insufficient confinement capability of the p-type electron blocking layer (p-EBL). Hence, p-EBL structures with/without gradient AlN alloys are discussed to reduce the electron leakage, and the importance of the positive sheet polarization charges at the interface between the last quantum barrier (LQB) and the p-EBL on affecting the blocking barrier height for electrons is especially highlighted. Moreover, we also suggest utilizing specially designed p-AlGaN/p-GaN structure instead of p-GaN structure to serve as the p-type hole supplier, which is able to increase the kinetic energy of holes, thus assisting holes to overcome the energy band barrier height in p-EBL and increasing the hole concentration within the quantum wells.

Engineering last quantum barrier/electron blocking layer interface to improve green light-emitting diodes

2021 ◽  
Vol 53 (11) ◽  
Author(s):  
Munaza Munsif ◽  
Muhammad Usman ◽  
Abdur-Rehman Anwar ◽  
Sibghatullah Khan ◽  
Saad Rasheed ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Layer Interface

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

2011 ◽  
Vol 20 (9) ◽  
pp. 098503 ◽  
Author(s):  
Tai-Ping Lu ◽  
Shu-Ti Li ◽  
Kang Zhang ◽  
Chao Liu ◽  
Guo-Wei Xiao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

scholarly journals High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer

2016 ◽  
Vol 24 (11) ◽  
pp. 11387 ◽  
Author(s):  
An-Jye Tzou ◽  
Da-Wei Lin ◽  
Chien-Rong Yu ◽  
Zhen-Yu Li ◽  
Yu-Kuang Liao ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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