Radially resolved electronic structure and charge carrier transport in silicon nanowires

2019 ◽  
Vol 108 ◽  
pp. 181-186 ◽  
Author(s):  
Florian Fuchs ◽  
Sibylle Gemming ◽  
Jörg Schuster
Keyword(s):  
Electronic Structure ◽  
Charge Carrier ◽  
Silicon Nanowires ◽  
Carrier Transport ◽  
Charge Carrier Transport

Effect of Meso-Submissions to Electronic Structure and Optical Properties of Ruffled Si Porphyrins Relatives

2014 ◽  
Vol 1028 ◽  
pp. 7-13
Author(s):  
Guo Jun Kang ◽  
Chao Song ◽  
Xue Feng Ren
Keyword(s):  
Density Functional Theory ◽  
Optical Properties ◽  
Electronic Structure ◽  
Charge Carrier ◽  
Electronic Structures ◽  
Density Functional ◽  
Carrier Transport ◽  
Frontier Molecular Orbital ◽  
Charge Carrier Transport ◽  
Functional Theory

A series of silicon (VI) porphyrins compounds with varying meso substitutions Si (TPP)Cl2 (where X=5,10,15,20-tetraphenylporphyrin), Si (TFP)Cl2 (X=5,10,15,20-tetrafluorenylporphyrin), Si (TQP)Cl2(X=5‚10‚15‚20-tetra (2,3,6,7-tetrahydro-1H,5H-benzo [ij] puinolizine) porphyrin),Si (TMP)Cl2(X=5,10,15,20-tetra (N,N-dimethylphenyl) porphyrin) have been investigated using density functional theory (DFT) to assess the influence of ruffled conformation on the electronic structures, frontier molecular orbital, charge carrier transport, electronic spectra. The electronic structures reveal that all these Si porphyrins display visible ruffling distortion, as the dihedral angle Cα2-N2-N4-Cα4 are ca. 30 ̊. And calculations confirm that ruffed distortion result in higher LUMO energies, lower EA values than corresponding planed Zn porphyrins, especial for similar λhole and λelectron values. These calculations suggest that the ruffled conformation bring about better charge injection and transport, which would broaden the application of distorted porphyrin in several different fields.

Limits of Charge Carrier Transport in Halide Perovskites Revealed by Optical-Pump Terahertz-Probe Spectroscopy

2019 ◽  
Author(s):  
Hannes Hempel ◽  
Andrei Petsiu ◽  
Martin Stolterfoht ◽  
Pascal Becker ◽  
Dieter Neher ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Optical Pump ◽  
Halide Perovskites ◽  
Probe Spectroscopy

scholarly journals Impact of Tortuosity on Charge-Carrier Transport in Organic Bulk Heterojunction Blends

2017 ◽  
Vol 8 (5) ◽  
Author(s):  
Michael C. Heiber ◽  
Klaus Kister ◽  
Andreas Baumann ◽  
Vladimir Dyakonov ◽  
Carsten Deibel ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Bulk Heterojunction ◽  
Charge Carrier Transport

Charge Carrier Transport in Phenazine

1979 ◽  
Vol 53 (3-4) ◽  
pp. 271-280 ◽  
Author(s):  
S. C. Mathur ◽  
B. Kumar ◽  
Keya Roy
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

Sign in / Sign up

Export Citation Format

Share Document