Introduce of Zn x Hg(1−x)Te as a room temperature photo-detector: ab initio calculations of the electronic structure and charge carrier transport

ABSTRACTA new oxydative-resistant, fusible and processible ethylene/acetylene copolymer has been synthesized. The content of rigid (acetylene) and flexible (ethylene) fragments has been widely varied. The structure of the nascent powders and the films compressed at room temperature have been investigated by SEM and WAXS. DSC has been used for studying the thermal properties. DC conductivity of the iodine doped samples has been measured as a function of temperature. It is shown that the doping leads to arising conductivity in the samples even at 10 Mol % acetylene fragments in copolymer. The conductivity up to 10−3 S/cm is reached for the samples with acetylene fragment concentration about 20 Mol %. It is found that a charge carrier transport in investigated copolymers is caused by doped polyacetylene fragments and described by the hopping Mechanism.

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Charge Carrier Transport along Grain Boundaries in Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.205-206.293 ◽

2013 ◽

Vol 205-206 ◽

pp. 293-298 ◽

Cited By ~ 2

Author(s):

Martin Kittler ◽

Manfred Reiche ◽

Hans Michael Krause

Keyword(s):

Charge Carrier ◽

Grain Boundaries ◽

Carrier Transport ◽

Room Temperature ◽

Drain Current ◽

Charge Carriers ◽

Strong Increase ◽

Charge Carrier Transport ◽

Mobility Of Charge Carriers

The influence of GBs contained in the channel of MOS-FETs - fabricated in thin SOI layers - is demonstrated. The drain current measured at room temperature increases about 50 times for nFETs and about 10 times for pFETs, respectively, as compared to reference devices. The observations might be interpreted as a strong increase of the mobility of charge carriers. Moreover, the observed stepwise changes of the drain current at 5 K may point to Coulomb blockades.

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Electronic Structure and Carrier Transport in Thin Graphene Films under a Vertical Electric Field Based on Ab-initio Calculations

2008 Device Research Conference ◽

10.1109/drc.2008.4800757 ◽

2008 ◽

Author(s):

Mari Ohfuchi ◽

Naoki Harada ◽

Masakatsu Ito ◽

Yuji Awano

Keyword(s):

Electronic Structure ◽

Electric Field ◽

Ab Initio Calculations ◽

Ab Initio ◽

Carrier Transport ◽

Graphene Films ◽

Vertical Electric Field

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Effect of Meso-Submissions to Electronic Structure and Optical Properties of Ruffled Si Porphyrins Relatives

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1028.7 ◽

2014 ◽

Vol 1028 ◽

pp. 7-13

Author(s):

Guo Jun Kang ◽

Chao Song ◽

Xue Feng Ren

Keyword(s):

Density Functional Theory ◽

Optical Properties ◽

Electronic Structure ◽

Charge Carrier ◽

Electronic Structures ◽

Density Functional ◽

Carrier Transport ◽

Frontier Molecular Orbital ◽

Charge Carrier Transport ◽

Functional Theory

A series of silicon (VI) porphyrins compounds with varying meso substitutions Si (TPP)Cl2 (where X=5,10,15,20-tetraphenylporphyrin), Si (TFP)Cl2 (X=5,10,15,20-tetrafluorenylporphyrin), Si (TQP)Cl2(X=5‚10‚15‚20-tetra (2,3,6,7-tetrahydro-1H,5H-benzo [ij] puinolizine) porphyrin),Si (TMP)Cl2(X=5,10,15,20-tetra (N,N-dimethylphenyl) porphyrin) have been investigated using density functional theory (DFT) to assess the influence of ruffled conformation on the electronic structures, frontier molecular orbital, charge carrier transport, electronic spectra. The electronic structures reveal that all these Si porphyrins display visible ruffling distortion, as the dihedral angle Cα2-N2-N4-Cα4 are ca. 30 ̊. And calculations confirm that ruffed distortion result in higher LUMO energies, lower EA values than corresponding planed Zn porphyrins, especial for similar λhole and λelectron values. These calculations suggest that the ruffled conformation bring about better charge injection and transport, which would broaden the application of distorted porphyrin in several different fields.

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