Single vacancy defects diffusion at the initial stage of graphene growth: A first-principles study

2015 ◽  
Vol 379 (18-19) ◽  
pp. 1270-1273 ◽  
Author(s):  
H.B. Du ◽  
Y. Jia ◽  
Q. Sun ◽  
Z.X. Guo
2014 ◽  
Vol 778-780 ◽  
pp. 1150-1153
Author(s):  
Hiroyuki Kageshima ◽  
Hiroki Hibino ◽  
Hiroshi Yamaguchi ◽  
Masao Nagase

The energetics for the Si desorption and the C adsorption at a [11-20] step on SiC(0001) surface are studied using the first-principles calculation. It is found that the [11-20] step is stable and nonreactive. The stability of the step is thought to govern the surface morphology during the graphene formation. It is shown that the Si pressure and the temperature are the control parameters for the surface morphology and the graphene quality.


2017 ◽  
Vol 33 (3) ◽  
pp. 520-529 ◽  
Author(s):  
Shao-Bin YANG ◽  
◽  
Si-Nan LI ◽  
Ding SHEN ◽  
Shu-Wei TANG ◽  
...  

2020 ◽  
Vol 821 ◽  
pp. 153223
Author(s):  
Zhixin Ren ◽  
Zhe Xue ◽  
Xinyu Zhang ◽  
Jiaqian Qin ◽  
Mingzhen Ma ◽  
...  

2013 ◽  
Vol 1020 ◽  
pp. 91-99 ◽  
Author(s):  
Tian-Tian Jia ◽  
Chun-Hai Lu ◽  
Kai-Ning Ding ◽  
Yong-Fan Zhang ◽  
Wen-Kai Chen

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