scholarly journals U(1)′ coupling constant at low energies from heterotic orbifolds

2019 ◽  
Vol 795 ◽  
pp. 673-681 ◽  
Author(s):  
Yessenia Olguín-Trejo ◽  
Omar Pérez-Figueroa ◽  
Ricardo Pérez-Martínez ◽  
Saúl Ramos-Sánchez
1990 ◽  
Vol 05 (16) ◽  
pp. 1279-1289 ◽  
Author(s):  
KENICHIRO AOKI

By considering the back reaction of the scattered particles on instantons, the explicit high energy behavior of fermion number violating amplitudes in the standard electroweak model is obtained to the leading order in the coupling constant. The amplitudes decay faster than what is expected from naive dimensional analysis due to the renormalization group flow of the coupling constant and this is consistent with unitarity. Also, it is shown that the constrained instanton approach is valid at low energies, while the high energy behavior is governed by the back reaction of the external particles.


1990 ◽  
Vol 05 (22) ◽  
pp. 1703-1715 ◽  
Author(s):  
ULF-G. MEIβNER

We review the present status of our understanding of parity violation in few-nucleon systems. At low energies, nuclear parity-violating forces can be parametrized in the framework of meson-exchange potentials. The pertinent weak meson-nucleon couplings can be calculated by invoking either the quark or the soliton model of the low-lying baryons. We compare the resulting couplings and discuss the advantages and limitations of both approaches. Then, we turn to the experimental study of nuclear parity violation in few-nucleon systems. First, we review various calculations of the longitudinal asymmetry in proton-proton scattering with an eye on the upcoming high-precision experiment at TRIUMF. We stress the importance of a consistent calculation of the weak and strong nucleon-nucleon potential. A toy calculation is presented for the photo-disintegration of the dueteron, which appears to be an excellent candidate to pin down the parity-violating pion-nucleon coupling constant. We encourage further theoretical as well as experimental studies.


Physics ◽  
2019 ◽  
Vol 1 (1) ◽  
pp. 59-66
Author(s):  
Gideon Alexander ◽  
Boris Blok

It is shown that α s ( E ) , the strong coupling constant, can be determined in the non-perturbative regime from Bose-Einstein correlations (BEC). The obtained α s ( E ) , where E is the energy of the hadron in the center of mass reference frame of the di-hadron pair, is in agreement with the prescriptions dealt with in the Analytic Perturbative Theory approach. It also extrapolates smoothly to the standard perturbative α s ( E ) at higher energies. Our results indicate that BEC dimension can be considered as an alternative approach to the short-range correlations between hadrons.


Author(s):  
X. Zhang ◽  
J. Spence ◽  
W. Qian ◽  
D. Taylor ◽  
K. Taylor

Experimental point-projection shadow microscope (PPM) images of uncoated, unstained purple membrane (PM, bacteriorhodopsin, a membrane protein from Halobacterium holobium) were obtained recently using 100 volt electrons. The membrane thickness is about 5 nm and the hexagonal unit cell dimension 6 nm. The images show contrast around the edges of small holes, as shown in figure 1. The interior of the film is opaque. Since the inelastic mean free path for 100V electrons in carbon (about 6 Å) is much less than the sample thickness, the question arises that how much, if any, transmission of elastically scattered electrons occurs. A large inelastic contribution is also expected, attenuated by the reduced detection efficiency of the channel plate at low energies. Quantitative experiments using an energy-loss spectrometer are planned. Recently Shedd has shown that at about 100V contrast in PPM images of thin gold films can be explained as Fresnel interference effects between different pinholes in the film, separated by less than the coherence width.


1991 ◽  
Vol 223 ◽  
Author(s):  
Hans P. Zappe ◽  
Gudrun Kaufel

ABSTRACTThe effect of numerous plasma reative ion etch and physical milling processes on the electrical behavior of GaAs bulk substrates has been investigated by means of electric microwave absorption. It was seen that plasma treatments at quite low energies may significantly affect the electrical quality of the etched semiconductor. Predominantly physical plasma etchants (Ar) were seen to create significant damage at very low energies. Chemical processes (involving Cl or F), while somewhat less pernicious, also gave rise to electrical substrate damage, the effect greater for hydrogenic ambients. Whereas rapid thermal anneal treatments tend to worsen the electrical integrity, some substrates respond positively to long-time high temperature anneal steps.


2019 ◽  
Author(s):  
S. Giarrusso ◽  
Paola Gori-Giorgi

We analyze in depth two widely used definitions (from the theory of conditional probablity amplitudes and from the adiabatic connection formalism) of the exchange-correlation energy density and of the response potential of Kohn-Sham density functional theory. We introduce a local form of the coupling-constant-dependent Hohenberg-Kohn functional, showing that the difference between the two definitions is due to a corresponding local first-order term in the coupling constant, which disappears globally (when integrated over all space), but not locally. We also design an analytic representation for the response potential in the strong-coupling limit of density functional theory for a model single stretched bond.<br>


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