Applicability of polymer and composite inner linings in containers for borehole disposal of sealed radioactive sources − A simulation-based study of radiation effects

The modeling of the capacitive phenomena, including the inductive effects becomes critical, especially in the case of a power converter with high switching frequencies, supplying an electrical device. At a low frequency, the electro-quasistatic (EQS) model is widely used to study the coupled resistive-capacitive effects, while the magneto-quasistatic (MQS) model is used to describe the coupled resistive-inductive effects. When the frequency increases, the Darwin model is preferred, which is able to capture the coupled resistive-capacitive-inductive effects by neglecting the radiation effects. In this work, we are interested in specifying the limits of these models, by investigating the influence of the frequency on the electromagnetic field distributions and the impedance of electromagnetic devices. Two different examples are carried out. For the first one, to validate the Darwin model, the measurement results are provided for comparison with the simulation results, which shows a good agreement. For the second one, the simulation results from three different models are compared, for both the local field distributions and the global impedances. It is shown that the EQS model can be used as an indicator to know at which frequency the Darwin model should be applied.

Download Full-text

Soft-Error Vulnerability Estimation Approach Based on the SET Susceptibility of Each Gate

Electronics ◽

10.3390/electronics8070749 ◽

2019 ◽

Vol 8 (7) ◽

pp. 749

Author(s):

Fábio Batagin Armelin ◽

Lírida Alves de Barros Naviner ◽

Roberto d’Amore

Keyword(s):

Radiation Effects ◽

Estimation Error ◽

Soft Errors ◽

Soft Error ◽

The Other ◽

Single Event ◽

Single Event Transient ◽

Logic Simulation ◽

Advantages And Disadvantages ◽

Simulation Based

Soft-Error Vulnerability (SEV) is a parameter used to evaluate the robustness of a circuit to the induced Soft Errors (SEs). There are many techniques for SEV estimation, including analytical, electrical and logic simulations, and emulation-based approaches. Each of them has advantages and disadvantages regarding estimation time, resources consumption, accuracy, and restrictions over the analysed circuit. Concerning the ionising radiation effects, some analytical and electrical simulation approaches take into account how the circuit topology and the applied input patterns affect their susceptibilities to Single Event Transient (SET) at the gate level. On the other hand, logic simulation and emulation techniques usually ignore these SET susceptibilities. In this context, we propose a logic simulation-based probability-aware approach for SEV estimation that takes into account the specific SET susceptibility of each circuit gate. For a given operational scenario, we extract the input patterns applied to each gate and calculate its specific SET susceptibility. For the 38 analysed benchmark circuits, we obtained a reduction from 15.27% to 0.68% in the average SEV estimation error, when comparing the estimated value to a reference obtained at the transistor level. The results point out an improvement of the SEV estimation process by considering the specific SET susceptibilities.

Download Full-text

Quantitative analysis of in situ straining experiments in the case of strong frictional forces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100109999 ◽

1978 ◽

Vol 36 (1) ◽

pp. 570-571

Author(s):

F. Louchet ◽

L.P. Kubin

Keyword(s):

Strain Rate ◽

Radiation Effects ◽

Dislocation Line ◽

Critical Length ◽

Local Strain ◽

Local Flow ◽

Double Kink ◽

Dislocation Densities ◽

Frictional Forces ◽

Local Strain Rate

Investigation of frictional forces -Experimental techniques and working conditions in the high voltage electron microscope have already been described (1). Care has been taken in order to minimize both surface and radiation effects under deformation conditions.Dislocation densities and velocities are measured on the records of the deformation. It can be noticed that mobile dislocation densities can be far below the total dislocation density in the operative system. The local strain-rate can be deduced from these measurements. The local flow stresses are deduced from the curvature radii of the dislocations when the local strain-rate reaches the values of ∿ 10-4 s-1.For a straight screw segment of length L moving by double-kink nucleation between two pinning points, the velocity is :where ΔG(τ) is the activation energy and lc the critical length for double-kink nucleation. The term L/lc takes into account the number of simultaneous attempts for double-kink nucleation on the dislocation line.

Download Full-text

Beam-radiation effects on wool in the ESEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144760 ◽

1986 ◽

Vol 44 ◽

pp. 674-675

Author(s):

G.D. Danilatos

Keyword(s):

Electron Beam ◽

Radiation Effects ◽

Research Work ◽

Beam Radiation ◽

Liquid Environment ◽

Know How ◽

Environmental Sem

The advent of the environmental SEM (ESEM) has made possible the examination of uncoated and untreated specimen surfaces in the presence of a gaseous or liquid environment. However, the question arises as to what degree the examined surface remains unaffected by the action of the electron beam. It is reasonable to assume that the beam invariably affects all specimens but the type and degree of effect may be totally unimportant for one class of applications and totally unacceptable for another; yet, for a third class, it is imperative to know how our observations are modified by the presence of the beam. The aim of this report is to create an awareness of the need to initiate research work in various fields in order to determine the guiding rules of the limitations (or even advantages) due to irradiation.

Download Full-text